Improvement in CPP-GMR read head sensor performance using [001]-oriented polycrystalline half-metallic Heusler alloy Co2FeGa0.5Ge0.5 and CoFe bilayer electrode

Sci Technol Adv Mater. 2024 Aug 14;25(1):2388503. doi: 10.1080/14686996.2024.2388503. eCollection 2024.

Abstract

A current-perpendicular-to-plane giant magnetoresistive (CPP-GMR) device with a half-metallic electrode is one of the most promising candidates of next-generation read head for hard disk drive. In this study, we fabricate [001]-oriented polycrystalline CPP-GMR devices with the normal ferromagnet (NFM) CoFe/half-metallic ferromagnet (HMFM) Co2FeGa0.5Ge0.5 (CFGG) bilayer electrodes to enhance the magnetoresistance (MR) ratio by large interfacial spin-dependent scattering at the NFM/HMFM interface. The CoFe/CFGG bilayer electrode provides the additional large interfacial spin-dependent scattering and achieves high MR ratio of 22.7% with the CoFe(4.5 nm)/CFGG(2.5 nm) bilayer electrodes, which is almost three(two) times larger than the MR ratio with the single CoFe(CFGG) (7 nm) electrodes. The bias voltage dependent study revealed an additional advantage of increasing the output voltage |ΔV| by using the CoFe/CFGG bilayer due to the improvement of the endurance against spin-transfer torque under high bias current. A maximum output voltage Δ V max of 6.5 mV was obtained with the CoFe(5.5 nm)/CFGG(1.5 nm) electrodes, which is the highest ever reported in the CPP-GMR devices with a uniform metallic spacer including high-quality epitaxial devices.

Keywords: Heusler alloy; Magnetic recording; giant magnetoresistance; half-metal; read head; spin-dependent scattering.

Plain language summary

Large improvement of MR ratio and the highest output voltage has been achieved in the poly-crystalline CPP-GMR with the half-metallic Co2FeGa0.5Ge0.5 and normal ferromagnetic CoFe bilayer electrodes.

Grants and funding

This work was supported by JSPS KAKENHI Grant No. [21H01608], MEXT Initiative to Establish Next-generation Novel Integrated Circuits Centers (X-NICS) Grant No. [JPJ011438], and JST CREST [Grant No. JPMJCR21O1].