Two-dimensional materials and their van der Waals heterostructures have emerged as a research focal point for constructing various innovative electronic devices due to their distinct photonic and electronic properties. Among them, anti-ambipolar devices, characterized by their unique nonlinear electrical behavior, have garnered attention as novel multifunctional components, positioning them as potential contenders for building multi-state logic devices. Utilizing the properties of few-layer As0.4P0.6 and PdSe2, we have constructed an anti-ambipolar heterojunction device. At 300 K, the device exhibits a peak voltage (Vpeak) of -3 V and a peak-to-valley ratio (PVR) close to 8 × 103, and the PVR can be modulated by bias voltage. Furthermore, by characterizing the anti-ambipolar attributes at different temperatures ranging from 80 K to 330 K, we have elucidated the thermally tunable feature of the device. At 330 K, a certain PVR (∼103) and a large Vpeak (∼-16 V) are obtained, while a PVR exceeding 108 has been achieved at 80 K. This temperature-related sensitivity empowers the device with significant potential and thermal tunability in various applications.