Dual-Tuned Terahertz Absorption Device Based on Vanadium Dioxide Phase Transition Properties

Ruyuan Zheng; Yingting Yi; Qianju Song; Zao Yi; Yougen Yi; Shubo Cheng; Jianguo Zhang; Chaojun Tang; Tangyou Sun; Qingdong Zeng

doi:10.3390/ma17174287

Dual-Tuned Terahertz Absorption Device Based on Vanadium Dioxide Phase Transition Properties

Materials (Basel). 2024 Aug 29;17(17):4287. doi: 10.3390/ma17174287.

Authors

Ruyuan Zheng¹, Yingting Yi², Qianju Song¹, Zao Yi^{1

3

4}, Yougen Yi², Shubo Cheng³, Jianguo Zhang⁵, Chaojun Tang⁶, Tangyou Sun⁷, Qingdong Zeng⁸

Affiliations

¹ Joint Laboratory for Extreme Conditions Matter Properties, Key Laboratory of Manufacturing Process Testing Technology of Ministry of Education, State Key Laboratory of Environment-Friendly Energy Materials, Southwest University of Science and Technology, Mianyang 621010, China.
² College of Physics and Electronics, Central South University, Changsha 410083, China.
³ School of Physics and Optoelectronic Engineering, Yangtze University, Jingzhou 434023, China.
⁴ School of Chemistry and Chemical Engineering, Jishou University, Jishou 416000, China.
⁵ Department of Physics, Jinzhong University, Jinzhong 030619, China.
⁶ College of Physics, Zhejiang University of Technology, Hangzhou 310023, China.
⁷ Guangxi Key Laboratory of Precision Navigation Technology and Application, Guilin University of Electronic Technology, Guilin 541004, China.
⁸ School of Physics and Electronic-Information Engineering, Hubei Engineering University, Xiaogan 432000, China.

Abstract

In recent years, absorbers related to metamaterials have been heavily investigated. In particular, VO₂ materials have received focused attention, and a large number of researchers have aimed at multilayer structures. This paper presents a new concept of a three-layer simple structure with VO₂ as the base, silicon dioxide as the dielectric layer, and graphene as the top layer. When VO₂ is in the insulated state, the absorber is in the closed state, Δf = 1.18 THz (absorption greater than 0.9); when VO₂ is in the metallic state, the absorber is open, Δf = 4.4 THz (absorption greater than 0.9), with ultra-broadband absorption. As a result of the absorption mode conversion, a phenomenon occurs with this absorber, with total transmission and total reflection occurring at 2.4 THz (A = 99.45% or 0.29%) and 6.5 THz (A = 90% or 0.24%) for different modes. Due to this absorption property, the absorber is able to achieve full-transmission and full-absorption transitions at specific frequencies. The device has great potential for applications in terahertz absorption, terahertz switching, and terahertz modulation.

Keywords: VO2; dynamic tunable; graphene; terahertz.

Grants and funding

The authors are grateful for the support of the National Natural Science Foundation of China (Nos. 51606158, 11604311, 12074151), and funding from the following: the Natural Science Foundation of Fujian Province (2022J011102, 2022H0048); the Guangxi Science and Technology Base and Talent Special Project (No. AD21075009); the Sichuan Science and Technology Program (No. 2021JDRC0022); the Natural Science Foundation of Fujian Province (2022J011102); the Research Project of Fashu Foundation (MFK23006); the Open Fund of the Key Laboratory for Metallurgical Equipment and Control Technology of Ministry of Education in Wuhan University of Science and Technology, China (No. MECOF2022B01); the Project supported by Guangxi Key Laboratory of Precision Navigation Technology and Application, Guilin University of Electronic Technology (No. DH202321); the Scientific Research Project of Huzhou College (2022HXKM07).