Ultra-shallow p-type doping of silicon by performing atomic layer deposition of Al2O3 thin films onto SiO2/Si

Salma Khaldi; Prajith Karadan; Krushnamurty Killi; Clovis Eduardo Mazzotti de Oliveira; Roie Yerushalmi

doi:10.1039/d4cc04510f

Ultra-shallow p-type doping of silicon by performing atomic layer deposition of Al₂O₃ thin films onto SiO₂/Si

Chem Commun (Camb). 2024 Oct 10;60(82):11754-11757. doi: 10.1039/d4cc04510f.

Authors

Salma Khaldi¹, Prajith Karadan¹, Krushnamurty Killi¹, Clovis Eduardo Mazzotti de Oliveira², Roie Yerushalmi¹

Affiliations

¹ Institute of Chemistry and the Center for Nanoscience and Nanotechnology, The Hebrew University of Jerusalem, Givat Ram Jerusalem 91904, Israel. [email protected].
² Applied Physics Department, The Hebrew University of Jerusalem, Givat Ram Jerusalem 91904, Israel.

PMID: 39319699
DOI: 10.1039/d4cc04510f

Abstract

We report an ultra-shallow p-type doping of silicon resulting from the rapid thermal annealing of thin Al₂O₃ films deposited on intrinsic silicon with a native SiO₂ layer, using a common atomic layer deposition process. Characterization revealed a two-stage decrease in sheet resistance, providing insights into the doping mechanism.