Study of the Characteristics of Ba0.6Sr0.4Ti1-xMnxO3-Film Resistance Random Access Memory Devices

Kai-Huang Chen; Chien-Min Cheng; Ming-Cheng Kao; Yun-Han Kao; Shen-Feng Lin

doi:10.3390/mi15091143

Study of the Characteristics of Ba_0.6Sr_0.4Ti_1-xMn_xO₃-Film Resistance Random Access Memory Devices

Micromachines (Basel). 2024 Sep 12;15(9):1143. doi: 10.3390/mi15091143.

Authors

Kai-Huang Chen¹, Chien-Min Cheng², Ming-Cheng Kao³, Yun-Han Kao², Shen-Feng Lin¹

Affiliations

¹ Department of Electronic Engineering, Center for Environmental Toxin and Emerging-Contaminant Research, Super Micro Mass Research & Technology Center, Cheng Shiu University, Kaohsiung 83347, Taiwan.
² Department of Electronic Engineering, Southern Taiwan University of Science and Technology, Tainan 710301, Taiwan.
³ Department of Information and Communication Engineering, Chaoyang University of Technology, Taichung 413310, Taiwan.

Abstract

In this study, Ba_0.6Sr_0.4Ti_1-xMn_xO₃ ceramics were fabricated by a novel ball milling technique followed by spin-coating to produce thin-film resistive memories. Measurements were made using field emission scanning electron microscopes, atomic force microscopes, X-ray diffractometers, and precision power meters to observe, analyze, and calculate surface microstructures, roughness, crystalline phases, half-height widths, and memory characteristics. Firstly, the effect of different sintering methods with different substitution ratios of Mn⁴⁺ for Ti⁴⁺ was studied. The surface microstructural changes of the films prepared by the one-time sintering method were compared with those of the solid-state reaction method, and the effects of substituting a small amount of Ti⁴⁺ with Mn⁴⁺ on the physical properties were analyzed. Finally, the optimal parameters obtained in the first part of the experiment were used for the fabrication of the thin-film resistive memory devices. The voltage and current characteristics, continuous operation times, conduction mechanisms, activation energies, and hopping distances of two types of thin-film resistive memory devices, BST and BSTM, were measured and studied under different compliance currents.

Keywords: BaSrTiMnO3; conduction mechanism; electronic hopping distance; resistance random access memory.

Grants and funding

This work was performed at the National Science Council Core Facilities Laboratory for Nano-Science and Nano-Technology in the Kaohsiung-Pingtung area and was supported by the National Science Council of the Republic of China under Contract No. NSTC 113-2622-E-230-001.