Broadband absorption in the visible spectrum is essential in optoelectronic applications that involve power conversion such as photovoltaics and photocatalysis. Most ultrathin broadband absorbers use parasitic plasmonic structures that maximize absorption using surface plasmons and/or Fabry-Perot cavities, which limits the weight efficiency of the device. Here, we show the theoretical and experimental realization of an unpatterned/planar semiconductor thin-film absorber based on monolayer transition-metal dichalcogenides. We experimentally demonstrate an average total absorption in the visible range (450-700 nm) of >70% using <4 nm of semiconductor absorbing materials scalable over large areas with vapor phase growth techniques. Our analysis suggests that a power conversion efficiency of 15.54% and a specific power >300 W g-1 may be achieved in a photovoltaic cell based on this metamaterial absorber.
Keywords: broadband absorber; multiheterostructure; nanophotonic; photovoltaic; transition-metal dichalcogenide.