In this work we theoretically investigate the possibility of observing strong coupling at mid-infrared frequencies within the group-IV semiconductor material platform. Our results show that the strong coupling condition is attainable in Ge/SiGe quantum wells integrated in hybrid metal-semiconductor microcavities, featuring a highly n-doped SiGe layer as one of the mirrors.
Keywords: germanium; quantum wells; strong coupling.
© 2024 the author(s), published by De Gruyter, Berlin/Boston.