Metastable body-centered cubic CoMnFe alloy films with perpendicular magnetic anisotropy for spintronics memory

Sci Technol Adv Mater. 2024 Nov 13;25(1):2421746. doi: 10.1080/14686996.2024.2421746. eCollection 2024.

Abstract

A body-centered cubic (bcc) FeCo(B) is a current standard magnetic material for perpendicular magnetic tunnel junctions (p-MTJs) showing both large tunnel magnetoresistance (TMR) and high interfacial perpendicular magnetic anisotropy (PMA) when MgO is utilized as a barrier material of p-MTJs. Since the p-MTJ is a key device of current spintronics memory, i.e. spin-transfer-torque magnetoresistive random access memory (STT-MRAM), it attracts attention for further advance to explore new magnetic materials showing both large PMA and TMR. However, there have been no such materials other than FeCo(B)/MgO. Here, we report, for the first time, PMA in metastable bcc Co-based alloy, i.e. bcc CoMnFe thin films which are known to exhibit large TMR effect when used for electrodes of MTJs with the MgO barrier. The largest intrinsic PMAs were about 0.6 and 0.8 MJ/m3 in a few nanometer-thick CoMnFe alloy film and multilayer film, respectively. Our ab-initio calculation suggested that PMA originates from tetragonal strain and the value exceeds 1 MJ/m3 with optimizing strain and alloys composition. The simulation of the thermal stability factor indicates that the magnetic properties obtained satisfy the requirement of the data retention performance of X-1X nm STT-MRAM. The large PMA and high TMR effect in bcc CoMnFe/MgO, which were rarely observed in materials other than FeCo(B)/MgO, indicate that bcc CoMnFe/MgO is one of the potential candidates of the materials for X-1X nm STT-MRAM.

Keywords: MRAM; ab-initio calculation; metastable alloy; multilayer; perpendicular magnetic anisotropy; thin film.

Plain language summary

We discovered large perpendicular magnetic anisotropy, ~0.8 MJ/m3, in metastable alloys, which are also known to exhibit large tunnel magnetoresistance, demonstrating new candidate for spintronic memory applications.

Grants and funding

Core Research for Evolutional Science and Technology [No. JPMJCR17J5]; Ministry of Education, Culture, Sports, Science and Technology, X-NICS [No. JPJ011438].