Author Correction: Epitaxial growth of high-quality GaN with a high growth rate at low temperatures by radical-enhanced metalorganic chemical vapor deposition

Sci Rep. 2024 Dec 20;14(1):30575. doi: 10.1038/s41598-024-82619-w.

Authors

Arun Kumar Dhasiyan¹, Frank Wilson Amalraj², Swathy Jayaprasad³, Naohiro Shimizu³, Osamu Oda³, Kenji Ishikawa³, Masaru Hori³

Affiliations

¹ Center for Low-Temperature Plasma Science (cLPS), Nagoya University, Furo-cho, Chikusa, Nagoya, 464-8603, Japan. [email protected].
² Center for Low-Temperature Plasma Science (cLPS), Nagoya University, Furo-cho, Chikusa, Nagoya, 464-8603, Japan. [email protected].
³ Center for Low-Temperature Plasma Science (cLPS), Nagoya University, Furo-cho, Chikusa, Nagoya, 464-8603, Japan.

No abstract available

Publication types

Published Erratum