Improving the Antioxidant Properties of Tin-Based Perovskite for the Enhanced Performance of Near-Infrared Light-Emitting Diodes Through the Synergy of Sn and SnF2

Yipeng Shen; Jianan Chen; Yuhan Si; Zhengguo Xiao; Kai Kang; Zhaobing Tang; Jing Wang; Chaoyu Xiang

doi:10.3390/ma17246059

Improving the Antioxidant Properties of Tin-Based Perovskite for the Enhanced Performance of Near-Infrared Light-Emitting Diodes Through the Synergy of Sn and SnF₂

Materials (Basel). 2024 Dec 11;17(24):6059. doi: 10.3390/ma17246059.

Authors

Yipeng Shen^{1

2

3}, Jianan Chen^{1

3}, Yuhan Si^{1

3

4

5}, Zhengguo Xiao², Kai Kang^{1

3

4}, Zhaobing Tang^{1

3

6}, Jing Wang^{5

7}, Chaoyu Xiang^{1

3

4}

Affiliations

¹ Laboratory of Optoelectronic and Information Materials and Devices, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China.
² Nano Science and Technology Institute, University of Science and Technology of China, Hefei 230026, China.
³ Laboratory of Optoelectronic and Information Materials and Devices, Qianwan Institute of CNITECH, Ningbo 315336, China.
⁴ Zhejiang Provincial Engineering Research Center of Energy Optoelectronic Materials and Devices, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China.
⁵ Department of Electrical and Electronic Engineering, University of Nottingham Ningbo China, Ningbo 315000, China.
⁶ The Institute of Advanced Displays and Imaging, Henan Academy of Sciences, Zhengzhou 450046, China.
⁷ Nottingham Ningbo China Beacons of Excellence Research and Innovation Institute, University of Nottingham Ningbo China, Ningbo 315048, China.

PMID: 39769658
DOI: 10.3390/ma17246059

Abstract

Tin-based perovskite has emerged as an excellent luminescent material due to its non-toxicity and narrow bandgap compared to lead-based perovskite. However, its tin ions are easily oxidized by oxygen, which leads to increased vacancy defects and poor crystallinity, presenting a significant challenge in obtaining high-quality perovskite films. In this context, we introduced an approach by synergistically adding SnF₂ and tin powder into the precursor solution to enhance the antioxidation of Sn ions. This method effectively improved the crystallinity of the perovskite films, reduced the density of defect states, and enhanced the photoluminescence performance of the films. Based on these findings, we successfully fabricated tin-based near-infrared perovskite light-emitting diodes (PeLEDs). With a 20% improvement in the Sn²⁺ content in the film, we achieved a threefold increase in the external quantum efficiency of the devices, reaching 3.6%.

Keywords: antioxidant; light-emitting diodes; synergy; tin-based perovskite.

Abstract

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