Extreme ultraviolet (EUV) lithography is a cutting-edge technology in contemporary semiconductor chip manufacturing. Monitoring the EUV beam profiles is critical to ensuring consistent quality and precision in the manufacturing process. This study uncovers the practical use of fluorescent nanodiamonds (FNDs) coated on optical image sensors for profiling EUV and soft X-ray (SXR) radiation beams. We employed a positive electrospray ion source to deposit 100 nm FNDs onto indium tin oxide (ITO)-coated substrates, forming 1 μm thick films. The scintillation films exhibited approximately 50% transparency in the visible region and could emit red fluorescence from neutral nitrogen-vacancy (NV0) centers in the FNDs when exposed to EUV/SXR radiation. We evaluated the performance of a device featuring an FND coating on a fiber optic plate (FOP) attached to the sensor of a complementary metal-oxide semiconductor (CMOS) camera using synchrotron radiation across the 80-1400 eV energy range. At 91.8 eV (or a wavelength of 13.5 nm), the fiber-coupled device exhibited a noise-equivalent power density of 0.25 μW cm-2 Hz-1/2, approximately eight times lower than that of an f/1.0 lens-coupled system. This enhanced sensitivity makes the FND/FOP-based detection system useful for beam profiling of various EUV/SXR radiation sources. Our results highlight the promising potential of electrosprayed FND scintillators as a cost-effective and versatile diagnostic tool for advancing next-generation photolithography.
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