[P-type silicon surface barrier detector used for X-ray dosimetry]

J UOEH. 1983 Jun 1;5(2):271-5. doi: 10.7888/juoeh.5.271.
[Article in Japanese]

Abstract

Responses to X-rays of a P-type surface barrier detector fabricated in our laboratory were studied, taking into consideration the dependence on the temperature in order to examine its applicability to dosimetry of short-range radiation. The study was also made in the case of N-type surface barrier detector. At room temperature, the short-circuit current increased linearly with exposure dose rate (15-50 R/min) for N- and P-type detectors. The open-circuit voltage showed a nonlinear dependence. With increasing temperature, the short-circuit current for the N-type detector was approximately constant up to 30 degrees C and then decreased, though the open-circuit voltage decreased linearly. For the P-type detector, both open-circuit voltage and short-circuit current decreased almost linearly with increasing temperature. While a P-type detector is still open to some improvements, these results indicate that it can be used as a dosimeter.

Publication types

  • Comparative Study
  • English Abstract
  • Research Support, Non-U.S. Gov't

MeSH terms

  • Radiometry / instrumentation*
  • Silicon
  • Temperature
  • X-Rays

Substances

  • Silicon