Core-level photoemission measurements of valence-band offsets in highly strained heterojunctions: Si-Ge system
Phys Rev B Condens Matter
.
1989 Jan 15;39(2):1235-1241.
doi: 10.1103/physrevb.39.1235.
Authors
GP Schwartz
,
MS Hybertsen
,
J Bevk
,
RG Nuzzo
,
JP Mannaerts
,
GJ Gualtieri
PMID:
9948308
DOI:
10.1103/physrevb.39.1235
No abstract available