Growth mechanism of thin silicon oxide films on Si(100) studied by medium-energy ion scattering
Phys Rev B Condens Matter
.
1995 Jul 15;52(3):1759-1775.
doi: 10.1103/physrevb.52.1759.
Authors
EP Gusev
,
HC Lu
,
T Gustafsson
,
E Garfunkel
PMID:
9981243
DOI:
10.1103/physrevb.52.1759
No abstract available