Intrinsic bistability by charge accumulation in an L-valley state in GaSb-AlSb resonant-tunneling diodes
Phys Rev B Condens Matter
.
1995 Aug 15;52(8):R5495-R5498.
doi: 10.1103/physrevb.52.r5495.
Authors
JL Jimenez
,
EE Mendez
,
X Li
,
WI Wang
PMID:
9981813
DOI:
10.1103/physrevb.52.r5495
No abstract available