Carrier localization of as-grown n-type gallium nitride under large hydrostatic pressure
Phys Rev B Condens Matter
.
1996 Jan 15;53(3):1322-1326.
doi: 10.1103/physrevb.53.1322.
Authors
C Wetzel
,
W Walukiewicz
,
EE Haller
,
J Ager 3rd
,
I Grzegory I
,
S Porowski
,
T Suski
PMID:
9983591
DOI:
10.1103/physrevb.53.1322
No abstract available