Scholz F - Search Results

1

Microwave and far-infrared induced optically detected cyclotron resonance in epitaxial InP and GaAs.

Moll A, Wetzel C, Meyer BK, Omling P, Scholz F. Moll A, et al. Among authors: scholz f. Phys Rev B Condens Matter. 1992 Jan 15;45(3):1504-1506. doi: 10.1103/physrevb.45.1504. Phys Rev B Condens Matter. 1992. PMID: 10001643 No abstract available.

2

Conduction-band spin splitting of type-I GaxIn1-xAs/InP quantum wells.

Kowalski B, Omling P, Meyer BK, Hofmann DM, Wetzel C, Härle V V, Scholz F, Sobkowicz P. Kowalski B, et al. Among authors: scholz f. Phys Rev B Condens Matter. 1994 May 15;49(20):14786-14789. doi: 10.1103/physrevb.49.14786. Phys Rev B Condens Matter. 1994. PMID: 10010579 No abstract available.

3

Electron effective mass and nonparabolicity in Ga0.47In0.53As/InP quantum wells.

Wetzel C, Winkler R, Drechsler M, Meyer BK, Rössler U, Scriba J, Kotthaus JP, Härle V V, Scholz F. Wetzel C, et al. Among authors: scholz f. Phys Rev B Condens Matter. 1996 Jan 15;53(3):1038-1041. doi: 10.1103/physrevb.53.1038. Phys Rev B Condens Matter. 1996. PMID: 9983549 No abstract available.

4

The quantitative analysis of mixed crystals CuS(x)Se(1-x) with abrasive stripping voltammetry and a redetermination of the solubility product of CuSe and the standard potential of the Cu/CuSe electrode.

Meyer B, Zhang S, Scholz F. Meyer B, et al. Among authors: scholz f. Anal Bioanal Chem. 1996 Sep;356(3-4):267-70. doi: 10.1007/s0021663560267. Anal Bioanal Chem. 1996. PMID: 15048366

5

A cell for in situ incident-light microscopy for the study of electrochromism of solid state electrochemical reactions.

Schröder U, Meyer B, Scholz F. Schröder U, et al. Among authors: scholz f. Anal Bioanal Chem. 1996 Sep;356(3-4):295-8. doi: 10.1007/s0021663560295. Anal Bioanal Chem. 1996. PMID: 15048372

6

Exciton dynamics for extended monolayer islands in thin In0.53Ga0.47As/InP quantum wells.

Bacher G, Kovac J, Streubel K, Schweizer H, Scholz F. Bacher G, et al. Among authors: scholz f. Phys Rev B Condens Matter. 1992 Apr 15;45(16):9136-9144. doi: 10.1103/physrevb.45.9136. Phys Rev B Condens Matter. 1992. PMID: 10000776 No abstract available.

7

Influence of exciton ionization on recombination dynamics in In0.53Ga0.47As/InP quantum wells.

Michler P, Hangleiter A, Moritz A, Härle V V, Scholz F. Michler P, et al. Among authors: scholz f. Phys Rev B Condens Matter. 1993 Jan 15;47(3):1671-1674. doi: 10.1103/physrevb.47.1671. Phys Rev B Condens Matter. 1993. PMID: 10006194 No abstract available.

8

Direct-to-indirect energy-gap transition in strained GaxIn1-xAs/InP quantum wells.

Michler P, Hangleiter A, Moritz A, Fuchs G, Härle V V, Scholz F. Michler P, et al. Among authors: scholz f. Phys Rev B Condens Matter. 1993 Oct 15;48(16):11991-11993. doi: 10.1103/physrevb.48.11991. Phys Rev B Condens Matter. 1993. PMID: 10007544 No abstract available.

9

Influence of barrier height on carrier lifetime in Ga1-yInyP/(AlxGa1-x)1-yInyP single quantum wells.

Michler P, Hangleiter A, Moser M, Geiger M, Scholz F. Michler P, et al. Among authors: scholz f. Phys Rev B Condens Matter. 1992 Sep 15;46(11):7280-7283. doi: 10.1103/physrevb.46.7280. Phys Rev B Condens Matter. 1992. PMID: 10002453 No abstract available.

10

Electric field effects on excitons in gallium nitride.

Binet F, Duboz JY, Rosencher E, Scholz F, Härle V V. Binet F, et al. Among authors: scholz f. Phys Rev B Condens Matter. 1996 Sep 15;54(11):8116-8121. doi: 10.1103/physrevb.54.8116. Phys Rev B Condens Matter. 1996. PMID: 9984492 No abstract available.

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