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Structurally induced optical transitions in Ge-Si superlattices.
Pearsall TP, Bevk J, Feldman LC, Bonar JM, Mannaerts JP, Ourmazd A. Pearsall TP, et al. Among authors: bevk j. Phys Rev Lett. 1987 Feb 16;58(7):729-732. doi: 10.1103/PhysRevLett.58.729. Phys Rev Lett. 1987. PMID: 10035020 No abstract available.
Electronic structure of Ge/Si monolayer strained-layer superlattices.
Pearsall TP, Bevk J, Bean JC, Bonar J, Mannaerts JP, Ourmazd A. Pearsall TP, et al. Among authors: bevk j. Phys Rev B Condens Matter. 1989 Feb 15;39(6):3741-3757. doi: 10.1103/physrevb.39.3741. Phys Rev B Condens Matter. 1989. PMID: 9948696 No abstract available.
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Ourmazd A, Taylor DW, Rentschler JA, Bevk J. Ourmazd A, et al. Among authors: bevk j. Phys Rev Lett. 1987 Jul 13;59(2):213-216. doi: 10.1103/PhysRevLett.59.213. Phys Rev Lett. 1987. PMID: 10035481 No abstract available.
Origin of the optical transitions in ordered Si/Ge(001) superlattices.
Hybertsen MS, Schlüter M, People R, Jackson SA, Lang DV, Pearsall TP, Bean JC, Vandenberg JM, Bevk J. Hybertsen MS, et al. Among authors: bevk j. Phys Rev B Condens Matter. 1988 Jun 15;37(17):10195-10198. doi: 10.1103/physrevb.37.10195. Phys Rev B Condens Matter. 1988. PMID: 9944449 No abstract available.
Boron diffusion in strained Si1-xGex epitaxial layers.
Moriya N, Feldman LC, Luftman HS, King CA, Bevk J, Freer B. Moriya N, et al. Among authors: bevk j. Phys Rev Lett. 1993 Aug 9;71(6):883-886. doi: 10.1103/PhysRevLett.71.883. Phys Rev Lett. 1993. PMID: 10055392 No abstract available.
16 results