Ultra-High-k Ferroelectric BaTiO3 Perovskite in the Gate Stack for Two-Dimensional WSe2 p-Type High-Performance Transistors.
Debashis P, Ryu H, Steinhardt R, Buragohain P, Plombon JJ, Maxey K, O'Brien KP, Kim R, Sen Gupta A, Rogan C, Lux J, Tung IC, Adams D, Gulseren M, Verma Penumatcha A, Shivaraman S, Li H, Zhong T, Harlson S, Tronic T, Oni A, Putna S, Clendenning SB, Metz M, Radosavljevic M, Avci U, Young IA.
Debashis P, et al. Among authors: clendenning sb.
Nano Lett. 2024 Oct 9;24(40):12353-12360. doi: 10.1021/acs.nanolett.4c02069. Epub 2024 Oct 1.
Nano Lett. 2024.
PMID: 39351895