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Page 1
Lateral motion of SiGe islands driven by surface-mediated alloying.
Denker U, Rastelli A, Stoffel M, Tersoff J, Katsaros G, Costantini G, Kern K, Jin-Phillipp NY, Jesson DE, Schmidt OG. Denker U, et al. Phys Rev Lett. 2005 Jun 3;94(21):216103. doi: 10.1103/PhysRevLett.94.216103. Epub 2005 Jun 3. Phys Rev Lett. 2005. PMID: 16090334
Dendrochronology of strain-relaxed islands.
Merdzhanova T, Kiravittaya S, Rastelli A, Stoffel M, Denker U, Schmidt OG. Merdzhanova T, et al. Among authors: denker u. Phys Rev Lett. 2006 Jun 9;96(22):226103. doi: 10.1103/PhysRevLett.96.226103. Epub 2006 Jun 6. Phys Rev Lett. 2006. PMID: 16803325
Atomic-scale pathway of the pyramid-to-dome transition during ge growth on Si(001).
Montalenti F, Raiteri P, Migas DB, von Känel H, Rastelli A, Manzano C, Costantini G, Denker U, Schmidt OG, Kern K, Miglio L. Montalenti F, et al. Among authors: denker u. Phys Rev Lett. 2004 Nov 19;93(21):216102. doi: 10.1103/PhysRevLett.93.216102. Epub 2004 Nov 17. Phys Rev Lett. 2004. PMID: 15601034