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Page 1
Defect distribution along single GaN nanowhiskers.
Cavallini A, Polenta L, Rossi M, Richter T, Marso M, Meijers R, Calarco R, Lüth H. Cavallini A, et al. Among authors: marso m. Nano Lett. 2006 Jul;6(7):1548-51. doi: 10.1021/nl060332n. Nano Lett. 2006. PMID: 16834447 Free article.
Investigation on localized states in GaN nanowires.
Polenta L, Rossi M, Cavallini A, Calarco R, Marso M, Meijers R, Richter T, Stoica T, Lüth H. Polenta L, et al. Among authors: marso m. ACS Nano. 2008 Feb;2(2):287-92. doi: 10.1021/nn700386w. ACS Nano. 2008. PMID: 19206629
Size-dependent photoconductivity in MBE-grown GaN-nanowires.
Calarco R, Marso M, Richter T, Aykanat AI, Meijers R, V D Hart A, Stoica T, Lüth H. Calarco R, et al. Among authors: marso m. Nano Lett. 2005 May;5(5):981-4. doi: 10.1021/nl0500306. Nano Lett. 2005. PMID: 15884906 Free article.
Flux quantization effects in InN nanowires.
Richter T, Blömers C, Lüth H, Calarco R, Indlekofer M, Marso M, Schäpers T. Richter T, et al. Among authors: marso m. Nano Lett. 2008 Sep;8(9):2834-8. doi: 10.1021/nl8014389. Epub 2008 Aug 20. Nano Lett. 2008. PMID: 18712932
Acoustic charge transport in GaN nanowires.
Ebbecke J, Maisch S, Wixforth A, Calarco R, Meijers R, Marso M, Lüth H. Ebbecke J, et al. Among authors: marso m. Nanotechnology. 2008 Jul 9;19(27):275708. doi: 10.1088/0957-4484/19/27/275708. Epub 2008 May 28. Nanotechnology. 2008. PMID: 21828720