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Atomistic mechanism of boron diffusion in silicon.
Phys Rev Lett. 2006 Dec 22;97(25):255902. doi: 10.1103/PhysRevLett.97.255902. Epub 2006 Dec 20.
Phys Rev Lett. 2006.
PMID: 17280368
Effect of strain on the carrier mobility in heavily doped p-type Si.
Romano L, Piro AM, Grimaldi MG, Bisognin G, Napolitani E, De Salvador D.
Romano L, et al. Among authors: bisognin g.
Phys Rev Lett. 2006 Sep 29;97(13):136605. doi: 10.1103/PhysRevLett.97.136605. Epub 2006 Sep 28.
Phys Rev Lett. 2006.
PMID: 17026061
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