Mayer TS - Search Results

1

Fabrication and characterization of axially doped silicon nanowire tunnel field-effect transistors.

Vallett AL, Minassian S, Kaszuba P, Datta S, Redwing JM, Mayer TS. Vallett AL, et al. Among authors: mayer ts. Nano Lett. 2010 Dec 8;10(12):4813-8. doi: 10.1021/nl102239q. Epub 2010 Nov 12. Nano Lett. 2010. PMID: 21073180

2

In situ axially doped n-channel silicon nanowire field-effect transistors.

Ho TT, Wang Y, Eichfeld S, Lew KK, Liu B, Mohney SE, Redwing JM, Mayer TS. Ho TT, et al. Among authors: mayer ts. Nano Lett. 2008 Dec;8(12):4359-64. doi: 10.1021/nl8022059. Nano Lett. 2008. PMID: 19367848

3

Use of phosphine as an n-type dopant source for vapor-liquid-solid growth of silicon nanowires.

Wang Y, Lew KK, Ho TT, Pan L, Novak SW, Dickey EC, Redwing JM, Mayer TS. Wang Y, et al. Among authors: mayer ts. Nano Lett. 2005 Nov;5(11):2139-43. doi: 10.1021/nl051442h. Nano Lett. 2005. PMID: 16277441

4

The effects of shell layer morphology and processing on the electrical and photovoltaic properties of silicon nanowire radial p+ - n+ junctions.

Wang X, Ke Y, Kendrick CE, Weng X, Shen H, Kuo M, Mayer TS, Redwing JM. Wang X, et al. Among authors: mayer ts. Nanoscale. 2015 Apr 28;7(16):7267-74. doi: 10.1039/c5nr00512d. Nanoscale. 2015. PMID: 25811140

5

Disorder dominated microwave conductance spectra of doped silicon nanowire arrays.

Highstrete C, Lee M, Vallett AL, Eichfeld SM, Redwing JM, Mayer TS. Highstrete C, et al. Among authors: mayer ts. Nano Lett. 2008 Jun;8(6):1557-61. doi: 10.1021/nl072496p. Epub 2008 Apr 30. Nano Lett. 2008. PMID: 18444685

6

Atomically thin heterostructures based on single-layer tungsten diselenide and graphene.

Lin YC, Chang CY, Ghosh RK, Li J, Zhu H, Addou R, Diaconescu B, Ohta T, Peng X, Lu N, Kim MJ, Robinson JT, Wallace RM, Mayer TS, Datta S, Li LJ, Robinson JA. Lin YC, et al. Among authors: mayer ts. Nano Lett. 2014 Dec 10;14(12):6936-41. doi: 10.1021/nl503144a. Epub 2014 Nov 17. Nano Lett. 2014. PMID: 25383798

7

Highly scalable, atomically thin WSe2 grown via metal-organic chemical vapor deposition.

Eichfeld SM, Hossain L, Lin YC, Piasecki AF, Kupp B, Birdwell AG, Burke RA, Lu N, Peng X, Li J, Azcatl A, McDonnell S, Wallace RM, Kim MJ, Mayer TS, Redwing JM, Robinson JA. Eichfeld SM, et al. Among authors: mayer ts. ACS Nano. 2015 Feb 24;9(2):2080-7. doi: 10.1021/nn5073286. Epub 2015 Feb 2. ACS Nano. 2015. PMID: 25625184

8

Quantitative mapping of phase coexistence in Mott-Peierls insulator during electronic and thermally driven phase transition.

Madan H, Jerry M, Pogrebnyakov A, Mayer T, Datta S. Madan H, et al. ACS Nano. 2015 Feb 24;9(2):2009-17. doi: 10.1021/nn507048d. Epub 2015 Feb 4. ACS Nano. 2015. PMID: 25632880

9

Single wire radial junction photovoltaic devices fabricated using aluminum catalyzed silicon nanowires.

Ke Y, Wang X, Weng XJ, Kendrick CE, Yu YA, Eichfeld SM, Yoon HP, Redwing JM, Mayer TS, Habib YM. Ke Y, et al. Among authors: mayer ts. Nanotechnology. 2011 Nov 4;22(44):445401. doi: 10.1088/0957-4484/22/44/445401. Epub 2011 Oct 7. Nanotechnology. 2011. PMID: 21983364

10

Crossed-nanowire molecular junctions: a new multispectroscopy platform for conduction--structure correlations.

Yoon HP, Maitani MM, Cabarcos OM, Cai L, Mayer TS, Allara DL. Yoon HP, et al. Among authors: mayer ts. Nano Lett. 2010 Aug 11;10(8):2897-902. doi: 10.1021/nl100982q. Nano Lett. 2010. PMID: 20698602

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