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Page 1
Lattice distortions in GaN on sapphire using the CBED-HOLZ technique.
Sridhara Rao DV, McLaughlin K, Kappers MJ, Humphreys CJ. Sridhara Rao DV, et al. Among authors: humphreys cj. Ultramicroscopy. 2009 Sep;109(10):1250-5. doi: 10.1016/j.ultramic.2009.05.018. Epub 2009 Jun 12. Ultramicroscopy. 2009. PMID: 19573990
Coincident electron channeling and cathodoluminescence studies of threading dislocations in GaN.
Naresh-Kumar G, Bruckbauer J, Edwards PR, Kraeusel S, Hourahine B, Martin RW, Kappers MJ, Moram MA, Lovelock S, Oliver RA, Humphreys CJ, Trager-Cowan C. Naresh-Kumar G, et al. Among authors: humphreys cj. Microsc Microanal. 2014 Feb;20(1):55-60. doi: 10.1017/S1431927613013755. Epub 2013 Nov 12. Microsc Microanal. 2014. PMID: 24230966 Free article.
Dislocations in AlGaN: Core Structure, Atom Segregation, and Optical Properties.
Massabuau FC, Rhode SL, Horton MK, O'Hanlon TJ, Kovács A, Zielinski MS, Kappers MJ, Dunin-Borkowski RE, Humphreys CJ, Oliver RA. Massabuau FC, et al. Among authors: humphreys cj. Nano Lett. 2017 Aug 9;17(8):4846-4852. doi: 10.1021/acs.nanolett.7b01697. Epub 2017 Jul 18. Nano Lett. 2017. PMID: 28707893 Free article.
Mg doping affects dislocation core structures in GaN.
Rhode SK, Horton MK, Kappers MJ, Zhang S, Humphreys CJ, Dusane RO, Sahonta S-, Moram MA. Rhode SK, et al. Among authors: humphreys cj. Phys Rev Lett. 2013 Jul 12;111(2):025502. doi: 10.1103/PhysRevLett.111.025502. Epub 2013 Jul 9. Phys Rev Lett. 2013. PMID: 23889417
The atomic structure of polar and non-polar InGaN quantum wells and the green gap problem.
Humphreys CJ, Griffiths JT, Tang F, Oehler F, Findlay SD, Zheng C, Etheridge J, Martin TL, Bagot PAJ, Moody MP, Sutherland D, Dawson P, Schulz S, Zhang S, Fu WY, Zhu T, Kappers MJ, Oliver RA. Humphreys CJ, et al. Ultramicroscopy. 2017 May;176:93-98. doi: 10.1016/j.ultramic.2017.01.019. Epub 2017 Feb 3. Ultramicroscopy. 2017. PMID: 28196629 Free article.
InGaN as a Substrate for AC Photoelectrochemical Imaging.
Zhou B, Das A, Kappers MJ, Oliver RA, Humphreys CJ, Krause S. Zhou B, et al. Among authors: humphreys cj. Sensors (Basel). 2019 Oct 11;19(20):4386. doi: 10.3390/s19204386. Sensors (Basel). 2019. PMID: 31614420 Free PMC article.
Low defect large area semi-polar (11[Formula: see text]2) GaN grown on patterned (113) silicon.
Pristovsek M, Han Y, Zhu T, Frentrup M, Kappers MJ, Humphreys CJ, Kozlowski G, Maaskant P, Corbett B. Pristovsek M, et al. Among authors: humphreys cj. Phys Status Solidi B Basic Solid State Phys. 2014 Dec 9;252(5):1104-1108. doi: 10.1002/pssb.201451591. eCollection 2015 May. Phys Status Solidi B Basic Solid State Phys. 2014. PMID: 26212392 Free PMC article.
63 results