Mihály G - Search Results

1

From stochastic single atomic switch to nanoscale resistive memory device.

Geresdi A, Halbritter A, Gyenis A, Makk P, Mihály G. Geresdi A, et al. Among authors: mihaly g. Nanoscale. 2011 Apr;3(4):1504-7. doi: 10.1039/c0nr00951b. Epub 2011 Mar 15. Nanoscale. 2011. PMID: 21409261

2

A fast operation of nanometer-scale metallic memristors: highly transparent conductance channels in Ag2S devices.

Geresdi A, Csontos M, Gubicza A, Halbritter A, Mihály G. Geresdi A, et al. Among authors: mihaly g. Nanoscale. 2014 Mar 7;6(5):2613-7. doi: 10.1039/c3nr05682a. Epub 2014 Jan 31. Nanoscale. 2014. PMID: 24481239

3

Non-exponential resistive switching in Ag2S memristors: a key to nanometer-scale non-volatile memory devices.

Gubicza A, Csontos M, Halbritter A, Mihály G. Gubicza A, et al. Among authors: mihaly g. Nanoscale. 2015 Mar 14;7(10):4394-9. doi: 10.1039/c5nr00399g. Nanoscale. 2015. PMID: 25684683

4

Resistive switching in metallic Ag2S memristors due to a local overheating induced phase transition.

Gubicza A, Csontos M, Halbritter A, Mihály G. Gubicza A, et al. Among authors: mihaly g. Nanoscale. 2015 Jul 14;7(26):11248-54. doi: 10.1039/c5nr02536b. Nanoscale. 2015. PMID: 26062764

5

Asymmetry-induced resistive switching in Ag-Ag2S-Ag memristors enabling a simplified atomic-scale memory design.

Gubicza A, Manrique DZ, Pósa L, Lambert CJ, Mihály G, Csontos M, Halbritter A. Gubicza A, et al. Among authors: mihaly g. Sci Rep. 2016 Aug 4;6:30775. doi: 10.1038/srep30775. Sci Rep. 2016. PMID: 27488426 Free PMC article.

6

Universal 1/f type current noise of Ag filaments in redox-based memristive nanojunctions.

Sánta B, Balogh Z, Gubicza A, Pósa L, Krisztián D, Mihály G, Csontos M, Halbritter A. Sánta B, et al. Among authors: mihaly g. Nanoscale. 2019 Mar 14;11(11):4719-4725. doi: 10.1039/c8nr09985e. Nanoscale. 2019. PMID: 30839979

7

Fractional conductance in hydrogen-embedded gold nanowires.

Csonka S, Halbritter A, Mihály G, Jurdik E, Shklyarevskii OI, Speller S, van Kempen H. Csonka S, et al. Among authors: mihaly g. Phys Rev Lett. 2003 Mar 21;90(11):116803. doi: 10.1103/PhysRevLett.90.116803. Epub 2003 Mar 20. Phys Rev Lett. 2003. PMID: 12688954

8

Pressure-induced ferromagnetism in (In,Mn)Sb dilute magnetic semiconductor.

Csontos M, Mihály G, Jankó B, Wojtowicz T, Liu X, Furdyna JK. Csontos M, et al. Among authors: mihaly g. Nat Mater. 2005 Jun;4(6):447-9. doi: 10.1038/nmat1388. Epub 2005 May 15. Nat Mater. 2005. PMID: 15895099

9

Magnetic scattering of spin polarized carriers in (In, Mn)Sb dilute magnetic semiconductor.

Csontos M, Wojtowicz T, Liu X, Dobrowolska M, Jankó B, Furdyna JK, Mihály G. Csontos M, et al. Among authors: mihaly g. Phys Rev Lett. 2005 Nov 25;95(22):227203. doi: 10.1103/PhysRevLett.95.227203. Epub 2005 Nov 21. Phys Rev Lett. 2005. PMID: 16384260

10

Separation of orbital contributions to the optical conductivity of BaVS(3).

Kézsmárki I, Mihály G, Gaál R, Barisić N, Akrap A, Berger H, Forró L, Homes CC, Mihály L. Kézsmárki I, et al. Among authors: mihaly g, mihaly l. Phys Rev Lett. 2006 May 12;96(18):186402. doi: 10.1103/PhysRevLett.96.186402. Epub 2006 May 11. Phys Rev Lett. 2006. PMID: 16712380

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