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Anti-reflective nano- and micro-structures on 4H-SiC for photodiodes.
Nanoscale Res Lett. 2011 Mar 18;6(1):236. doi: 10.1186/1556-276X-6-236.
Nanoscale Res Lett. 2011.
PMID: 21711744
Free PMC article.
Effect of Sacrificial AlN (Aluminum Nitride) Layer on the Deep Surface States of 4H-SiC.
Son WY, Moon JH, Bahng W, Koo SM.
Son WY, et al. Among authors: bahng w.
J Nanosci Nanotechnol. 2021 Mar 1;21(3):1904-1908. doi: 10.1166/jnn.2021.18906.
J Nanosci Nanotechnol. 2021.
PMID: 33404466
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Top-down fabrication of 4H-SiC nano-channel field effect transistors.
Kang MS, Lee JH, Bahng W, Kim NK, Koo SM.
Kang MS, et al. Among authors: bahng w.
J Nanosci Nanotechnol. 2014 Oct;14(10):7821-3. doi: 10.1166/jnn.2014.9387.
J Nanosci Nanotechnol. 2014.
PMID: 25942873
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