Sadakuni S - Search Results

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Dependence of process characteristics on atomic-step density in catalyst-referred etching of 4H-SiC(0001) surface.

Okamoto T, Sano Y, Tachibana K, Arima K, Hattori AN, Yagi K, Murata J, Sadakuni S, Yamauchi K. Okamoto T, et al. Among authors: sadakuni s. J Nanosci Nanotechnol. 2011 Apr;11(4):2928-30. doi: 10.1166/jnn.2011.3917. J Nanosci Nanotechnol. 2011. PMID: 21776655

Improved optical and electrical characteristics of free-standing GaN substrates by chemical polishing utilizing photo-electrochemical method.

Murata J, Shirasawa Y, Sano Y, Sadakuni S, Yagi K, Okamoto T, Hattori AN, Arima K, Yamauchi K. Murata J, et al. Among authors: sadakuni s. J Nanosci Nanotechnol. 2011 Apr;11(4):2882-5. doi: 10.1166/jnn.2011.3918. J Nanosci Nanotechnol. 2011. PMID: 21776647

Structure and magnetic properties of mono- and bi-layer graphene films on ultraprecision figured 4H-SiC(0001) surfaces.

Hattori AN, Okamoto T, Sadakuni S, Murata J, Oi H, Arima K, Sano Y, Hattori K, Daimon H, Endo K, Yamauchi K. Hattori AN, et al. Among authors: sadakuni s. J Nanosci Nanotechnol. 2011 Apr;11(4):2897-902. doi: 10.1166/jnn.2011.3893. J Nanosci Nanotechnol. 2011. PMID: 21776650

Efficient wet etching of GaN (0001) substrate with subsurface damage layer.

Sadakuni S, Murata J, Yagi K, Sano Y, Okamoto T, Kenta A, Hattori AN, Yamauchi K. Sadakuni S, et al. J Nanosci Nanotechnol. 2011 Apr;11(4):2979-82. doi: 10.1166/jnn.2011.3897. J Nanosci Nanotechnol. 2011. PMID: 21776664

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