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High degree of polarization of the near-band-edge photoluminescence in ZnO nanowires.
Nanoscale Res Lett. 2011 Aug 19;6(1):501. doi: 10.1186/1556-276X-6-501.
Nanoscale Res Lett. 2011.
PMID: 21854578
Free PMC article.
Visible-blind photodetector based on p-i-n junction GaN nanowire ensembles.
Bugallo Ade L, Tchernycheva M, Jacopin G, Rigutti L, Julien FH, Chou ST, Lin YT, Tseng PH, Tu LW.
Bugallo Ade L, et al.
Nanotechnology. 2010 Aug 6;21(31):315201. doi: 10.1088/0957-4484/21/31/315201. Epub 2010 Jul 15.
Nanotechnology. 2010.
PMID: 20634569
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Investigation of the electronic transport in GaN nanowires containing GaN/AlN quantum discs.
Rigutti L, Jacopin G, Bugallo Ade L, Tchernycheva M, Warde E, Julien FH, Songmuang R, Galopin E, Largeau L, Harmand JC.
Rigutti L, et al. Among authors: bugallo ade l.
Nanotechnology. 2010 Oct 22;21(42):425206. doi: 10.1088/0957-4484/21/42/425206. Epub 2010 Sep 24.
Nanotechnology. 2010.
PMID: 20864782
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Correction: Engineering surface state density of monolayer CVD grown 2D MoS2 for enhanced photodetector performance.
Polumati G, Kolli CSR, Bugallo AL, Sahatiya P.
Polumati G, et al.
PLoS One. 2024 Dec 17;19(12):e0316118. doi: 10.1371/journal.pone.0316118. eCollection 2024.
PLoS One. 2024.
PMID: 39689070
Free PMC article.
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