Grützmacher D - Search Results

1

Electrical spin injection into InN semiconductor nanowires.

Heedt S, Morgan C, Weis K, Bürgler DE, Calarco R, Hardtdegen H, Grützmacher D, Schäpers T. Heedt S, et al. Among authors: grutzmacher d. Nano Lett. 2012 Sep 12;12(9):4437-43. doi: 10.1021/nl301052g. Epub 2012 Aug 21. Nano Lett. 2012. PMID: 22889199

2

Three-dimensional Si/Ge quantum dot crystals.

Grützmacher D, Fromherz T, Dais C, Stangl J, Müller E, Ekinci Y, Solak HH, Sigg H, Lechner RT, Wintersberger E, Birner S, Holý V, Bauer G. Grützmacher D, et al. Nano Lett. 2007 Oct;7(10):3150-6. doi: 10.1021/nl0717199. Epub 2007 Sep 25. Nano Lett. 2007. PMID: 17892317

3

Interface and wetting layer effect on the catalyst-free nucleation and growth of GaN nanowires.

Stoica T, Sutter E, Meijers RJ, Debnath RK, Calarco R, Lüth H, Grützmacher D. Stoica T, et al. Among authors: grutzmacher d. Small. 2008 Jun;4(6):751-4. doi: 10.1002/smll.200700936. Small. 2008. PMID: 18535990 No abstract available.

4

Enhanced light scattering of the forbidden longitudinal optical phonon mode studied by micro-Raman spectroscopy on single InN nanowires.

Schäfer-Nolte EO, Stoica T, Gotschke T, Limbach FA, Sutter E, Sutter P, Grützmacher D, Calarco R. Schäfer-Nolte EO, et al. Among authors: grutzmacher d. Nanotechnology. 2010 Aug 6;21(31):315702. doi: 10.1088/0957-4484/21/31/315702. Epub 2010 Jul 15. Nanotechnology. 2010. PMID: 20634570

5

Electronic phase coherence in InAs nanowires.

Blömers Ch, Lepsa MI, Luysberg M, Grützmacher D, Lüth H, Schäpers T. Blömers Ch, et al. Among authors: grutzmacher d. Nano Lett. 2011 Sep 14;11(9):3550-6. doi: 10.1021/nl201102a. Epub 2011 Aug 30. Nano Lett. 2011. PMID: 21848307

6

Manipulating InAs nanowires with submicrometer precision.

Flöhr K, Liebmann M, Sladek K, Günel HY, Frielinghaus R, Haas F, Meyer C, Hardtdegen H, Schäpers T, Grützmacher D, Morgenstern M. Flöhr K, et al. Among authors: grutzmacher d. Rev Sci Instrum. 2011 Nov;82(11):113705. doi: 10.1063/1.3657135. Rev Sci Instrum. 2011. PMID: 22128982

7

Electronic transport with dielectric confinement in degenerate InN nanowires.

Blömers Ch, Lu JG, Huang L, Witte C, Grützmacher D, Lüth H, Schäpers T. Blömers Ch, et al. Among authors: grutzmacher d. Nano Lett. 2012 Jun 13;12(6):2768-72. doi: 10.1021/nl204500r. Epub 2012 May 4. Nano Lett. 2012. PMID: 22494319

8

Molecular beam epitaxy growth of GaAs/InAs core-shell nanowires and fabrication of InAs nanotubes.

Rieger T, Luysberg M, Schäpers T, Grützmacher D, Lepsa MI. Rieger T, et al. Among authors: grutzmacher d. Nano Lett. 2012 Nov 14;12(11):5559-64. doi: 10.1021/nl302502b. Epub 2012 Oct 12. Nano Lett. 2012. PMID: 23030380

9

Realization of nanoscaled tubular conductors by means of GaAs/InAs core/shell nanowires.

Blömers C, Rieger T, Zellekens P, Haas F, Lepsa MI, Hardtdegen H, Gül O, Demarina N, Grützmacher D, Lüth H, Schäpers T. Blömers C, et al. Among authors: grutzmacher d. Nanotechnology. 2013 Jan 25;24(3):035203. doi: 10.1088/0957-4484/24/3/035203. Epub 2012 Dec 21. Nanotechnology. 2013. PMID: 23263179

10

Nanoimprint and selective-area MOVPE for growth of GaAs/InAs core/shell nanowires.

Haas F, Sladek K, Winden A, von der Ahe M, Weirich TE, Rieger T, Lüth H, Grützmacher D, Schäpers T, Hardtdegen H. Haas F, et al. Among authors: grutzmacher d. Nanotechnology. 2013 Mar 1;24(8):085603. doi: 10.1088/0957-4484/24/8/085603. Epub 2013 Feb 5. Nanotechnology. 2013. PMID: 23385879

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