Eda G - Search Results

1

Evolution of electronic structure in atomically thin sheets of WS2 and WSe2.

Zhao W, Ghorannevis Z, Chu L, Toh M, Kloc C, Tan PH, Eda G. Zhao W, et al. Among authors: eda g. ACS Nano. 2013 Jan 22;7(1):791-7. doi: 10.1021/nn305275h. Epub 2012 Dec 28. ACS Nano. 2013. PMID: 23256505

2

Coherent atomic and electronic heterostructures of single-layer MoS2.

Eda G, Fujita T, Yamaguchi H, Voiry D, Chen M, Chhowalla M. Eda G, et al. ACS Nano. 2012 Aug 28;6(8):7311-7. doi: 10.1021/nn302422x. Epub 2012 Jul 20. ACS Nano. 2012. PMID: 22799455

3

Two-dimensional crystals: managing light for optoelectronics.

Eda G, Maier SA. Eda G, et al. ACS Nano. 2013 Jul 23;7(7):5660-5. doi: 10.1021/nn403159y. Epub 2013 Jul 8. ACS Nano. 2013. PMID: 23834654

4

Lattice dynamics in mono- and few-layer sheets of WS2 and WSe2.

Zhao W, Ghorannevis Z, Amara KK, Pang JR, Toh M, Zhang X, Kloc C, Tan PH, Eda G. Zhao W, et al. Among authors: eda g. Nanoscale. 2013 Oct 21;5(20):9677-83. doi: 10.1039/c3nr03052k. Nanoscale. 2013. PMID: 23999910

5

Origin of indirect optical transitions in few-layer MoS2, WS2, and WSe2.

Zhao W, Ribeiro RM, Toh M, Carvalho A, Kloc C, Castro Neto AH, Eda G. Zhao W, et al. Among authors: eda g. Nano Lett. 2013;13(11):5627-34. doi: 10.1021/nl403270k. Epub 2013 Nov 4. Nano Lett. 2013. PMID: 24168432

6

Transport properties of monolayer MoS2 grown by chemical vapor deposition.

Schmidt H, Wang S, Chu L, Toh M, Kumar R, Zhao W, Neto AH, Martin J, Adam S, Özyilmaz B, Eda G. Schmidt H, et al. Among authors: eda g. Nano Lett. 2014;14(4):1909-13. doi: 10.1021/nl4046922. Epub 2014 Mar 25. Nano Lett. 2014. PMID: 24640984

7

Large thermoelectricity via variable range hopping in chemical vapor deposition grown single-layer MoS2.

Wu J, Schmidt H, Amara KK, Xu X, Eda G, Özyilmaz B. Wu J, et al. Among authors: eda g. Nano Lett. 2014 May 14;14(5):2730-4. doi: 10.1021/nl500666m. Epub 2014 May 5. Nano Lett. 2014. PMID: 24749833

8

Photocarrier relaxation pathway in two-dimensional semiconducting transition metal dichalcogenides.

Kozawa D, Kumar R, Carvalho A, Kumar Amara K, Zhao W, Wang S, Toh M, Ribeiro RM, Castro Neto AH, Matsuda K, Eda G. Kozawa D, et al. Among authors: eda g. Nat Commun. 2014 Jul 29;5:4543. doi: 10.1038/ncomms5543. Nat Commun. 2014. PMID: 25072556 Free article.

9

Charge transport in ion-gated mono-, bi-, and trilayer MoS2 field effect transistors.

Chu L, Schmidt H, Pu J, Wang S, Ozyilmaz B, Takenobu T, Eda G. Chu L, et al. Among authors: eda g. Sci Rep. 2014 Dec 3;4:7293. doi: 10.1038/srep07293. Sci Rep. 2014. PMID: 25465059 Free PMC article.

10

Van der Waals force: a dominant factor for reactivity of graphene.

Lee JH, Avsar A, Jung J, Tan JY, Watanabe K, Taniguchi T, Natarajan S, Eda G, Adam S, Castro Neto AH, Özyilmaz B. Lee JH, et al. Among authors: eda g. Nano Lett. 2015 Jan 14;15(1):319-25. doi: 10.1021/nl5036012. Epub 2014 Dec 12. Nano Lett. 2015. PMID: 25493357

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