Kang J - Search Results

1

A low energy oxide-based electronic synaptic device for neuromorphic visual systems with tolerance to device variation.

Yu S, Gao B, Fang Z, Yu H, Kang J, Wong HS. Yu S, et al. Among authors: kang j. Adv Mater. 2013 Mar 25;25(12):1774-9. doi: 10.1002/adma.201203680. Epub 2013 Jan 27. Adv Mater. 2013. PMID: 23355110

2

Monitoring oxygen movement by Raman spectroscopy of resistive random access memory with a graphene-inserted electrode.

Tian H, Chen HY, Gao B, Yu S, Liang J, Yang Y, Xie D, Kang J, Ren TL, Zhang Y, Wong HS. Tian H, et al. Among authors: kang j. Nano Lett. 2013 Feb 13;13(2):651-7. doi: 10.1021/nl304246d. Epub 2013 Jan 8. Nano Lett. 2013. PMID: 23278753

3

HfOx-based vertical resistive switching random access memory suitable for bit-cost-effective three-dimensional cross-point architecture.

Yu S, Chen HY, Gao B, Kang J, Wong HS. Yu S, et al. Among authors: kang j. ACS Nano. 2013 Mar 26;7(3):2320-5. doi: 10.1021/nn305510u. Epub 2013 Feb 19. ACS Nano. 2013. PMID: 23411406

4

Experimental study of plane electrode thickness scaling for 3D vertical resistive random access memory.

Chen HY, Yu S, Gao B, Liu R, Jiang Z, Deng Y, Chen B, Kang J, Wong HS. Chen HY, et al. Among authors: kang j. Nanotechnology. 2013 Nov 22;24(46):465201. doi: 10.1088/0957-4484/24/46/465201. Epub 2013 Oct 22. Nanotechnology. 2013. PMID: 24148997

5

Stochastic learning in oxide binary synaptic device for neuromorphic computing.

Yu S, Gao B, Fang Z, Yu H, Kang J, Wong HS. Yu S, et al. Among authors: kang j. Front Neurosci. 2013 Oct 31;7:186. doi: 10.3389/fnins.2013.00186. eCollection 2013. Front Neurosci. 2013. PMID: 24198752 Free PMC article.

6

Ultra-low-energy three-dimensional oxide-based electronic synapses for implementation of robust high-accuracy neuromorphic computation systems.

Gao B, Bi Y, Chen HY, Liu R, Huang P, Chen B, Liu L, Liu X, Yu S, Wong HS, Kang J. Gao B, et al. Among authors: kang j. ACS Nano. 2014 Jul 22;8(7):6998-7004. doi: 10.1021/nn501824r. Epub 2014 Jun 12. ACS Nano. 2014. PMID: 24884237

7

Highly compact (4F2) and well behaved nano-pillar transistor controlled resistive switching cell for neuromorphic system application.

Chen B, Wang X, Gao B, Fang Z, Kang J, Liu L, Liu X, Lo GQ, Kwong DL. Chen B, et al. Among authors: kang j. Sci Rep. 2014 Oct 31;4:6863. doi: 10.1038/srep06863. Sci Rep. 2014. PMID: 25359219 Free PMC article.

8

High-performance HfO x /AlO y -based resistive switching memory cross-point array fabricated by atomic layer deposition.

Chen Z, Zhang F, Chen B, Zheng Y, Gao B, Liu L, Liu X, Kang J. Chen Z, et al. Among authors: kang j. Nanoscale Res Lett. 2015 Feb 18;10:70. doi: 10.1186/s11671-015-0738-1. eCollection 2015. Nanoscale Res Lett. 2015. PMID: 25852366 Free PMC article.

9

Disturbance characteristics of half-selected cells in a cross-point resistive switching memory array.

Chen Z, Li H, Chen HY, Chen B, Liu R, Huang P, Zhang F, Jiang Z, Ye H, Bin Gao, Liu L, Liu X, Kang J, Wong HS, Yu S. Chen Z, et al. Among authors: kang j. Nanotechnology. 2016 May 27;27(21):215204. doi: 10.1088/0957-4484/27/21/215204. Epub 2016 Apr 20. Nanotechnology. 2016. PMID: 27094841

10

Direct Observations of Nanofilament Evolution in Switching Processes in HfO₂ -Based Resistive Random Access Memory by In Situ TEM Studies.

Li C, Gao B, Yao Y, Guan X, Shen X, Wang Y, Huang P, Liu L, Liu X, Li J, Gu C, Kang J, Yu R. Li C, et al. Among authors: kang j. Adv Mater. 2017 Mar;29(10). doi: 10.1002/adma.201602976. Epub 2017 Jan 11. Adv Mater. 2017. PMID: 28075035

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