Desplanque L - Search Results

1

Coherent tunnelling across a quantum point contact in the quantum Hall regime.

Martins F, Faniel S, Rosenow B, Sellier H, Huant S, Pala MG, Desplanque L, Wallart X, Bayot V, Hackens B. Martins F, et al. Among authors: desplanque l. Sci Rep. 2013;3:1416. doi: 10.1038/srep01416. Sci Rep. 2013. PMID: 23475303 Free PMC article.

2

Mid-wave infrared sensitized InGaAs using intraband transition in doped colloidal II-VI nanocrystals.

Khalili A, Cavallo M, Dang TH, Dabard C, Zhang H, Bossavit E, Abadie C, Prado Y, Xu XZ, Ithurria S, Vincent G, Coinon C, Desplanque L, Lhuillier E. Khalili A, et al. Among authors: desplanque l. J Chem Phys. 2023 Mar 7;158(9):094702. doi: 10.1063/5.0141328. J Chem Phys. 2023. PMID: 36889960

3

Imaging Coulomb islands in a quantum Hall interferometer.

Hackens B, Martins F, Faniel S, Dutu CA, Sellier H, Huant S, Pala M, Desplanque L, Wallart X, Bayot V. Hackens B, et al. Among authors: desplanque l. Nat Commun. 2010 Jul 27;1:39. doi: 10.1038/ncomms1038. Nat Commun. 2010. PMID: 20975700 Free article.

4

Transport inefficiency in branched-out mesoscopic networks: an analog of the Braess paradox.

Pala MG, Baltazar S, Liu P, Sellier H, Hackens B, Martins F, Bayot V, Wallart X, Desplanque L, Huant S. Pala MG, et al. Among authors: desplanque l. Phys Rev Lett. 2012 Feb 17;108(7):076802. doi: 10.1103/PhysRevLett.108.076802. Epub 2012 Feb 13. Phys Rev Lett. 2012. PMID: 22401236

5

On the origins of transport inefficiencies in mesoscopic networks.

Toussaint S, Martins F, Faniel S, Pala MG, Desplanque L, Wallart X, Sellier H, Huant S, Bayot V, Hackens B. Toussaint S, et al. Among authors: desplanque l. Sci Rep. 2018 Feb 14;8(1):3017. doi: 10.1038/s41598-018-21250-y. Sci Rep. 2018. PMID: 29445196 Free PMC article.

6

Strain relief and growth optimization of GaSb on GaP by molecular beam epitaxy.

Wang Y, Ruterana P, Chen J, Desplanque L, El Kazzi S, Wallart X. Wang Y, et al. Among authors: desplanque l. J Phys Condens Matter. 2012 Aug 22;24(33):335802. doi: 10.1088/0953-8984/24/33/335802. Epub 2012 Jul 27. J Phys Condens Matter. 2012. PMID: 22836299

7

100 nm AlSb/InAs HEMT for ultra-low-power consumption, low-noise applications.

Gardès C, Bagumako S, Desplanque L, Wichmann N, Bollaert S, Danneville F, Wallart X, Roelens Y. Gardès C, et al. Among authors: desplanque l. ScientificWorldJournal. 2014 Feb 23;2014:136340. doi: 10.1155/2014/136340. eCollection 2014. ScientificWorldJournal. 2014. PMID: 24707193 Free PMC article.

8

Influence of nanoscale faceting on the tunneling properties of near broken gap InAs/AlGaSb heterojunctions grown by selective area epitaxy.

Desplanque L, Fahed M, Han X, Chinni VK, Troadec D, Chauvat MP, Ruterana P, Wallart X. Desplanque L, et al. Nanotechnology. 2014 Nov 21;25(46):465302. doi: 10.1088/0957-4484/25/46/465302. Epub 2014 Oct 30. Nanotechnology. 2014. PMID: 25354494

9

Impact of P/In flux ratio and epilayer thickness on faceting for nanoscale selective area growth of InP by molecular beam epitaxy.

Fahed M, Desplanque L, Coinon C, Troadec D, Wallart X. Fahed M, et al. Among authors: desplanque l. Nanotechnology. 2015 Jul 24;26(29):295301. doi: 10.1088/0957-4484/26/29/295301. Epub 2015 Jul 2. Nanotechnology. 2015. PMID: 26134951

10

Selective area heteroepitaxy of GaSb on GaAs (001) for in-plane InAs nanowire achievement.

Fahed M, Desplanque L, Troadec D, Patriarche G, Wallart X. Fahed M, et al. Among authors: desplanque l. Nanotechnology. 2016 Dec 16;27(50):505301. doi: 10.1088/0957-4484/27/50/505301. Epub 2016 Nov 18. Nanotechnology. 2016. PMID: 27861165

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