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PNP PIN bipolar phototransistors for high-speed applications built in a 180 nm CMOS process.
Solid State Electron. 2012 Aug;74(5):49-57. doi: 10.1016/j.sse.2012.04.011.
Solid State Electron. 2012.
PMID: 23482349
Free PMC article.
High-speed bipolar phototransistors in a 180 nm CMOS process.
Kostov P, Gaberl W, Zimmermann H.
Kostov P, et al. Among authors: gaberl w.
Opt Laser Technol. 2013 Mar;46(9):6-13. doi: 10.1016/j.optlastec.2012.04.011.
Opt Laser Technol. 2013.
PMID: 23847388
Free PMC article.
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0.35 μm CMOS avalanche photodiode with high responsivity and responsivity-bandwidth product.
Gaberl W, Steindl B, Schneider-Hornstein K, Enne R, Zimmermann H.
Gaberl W, et al.
Opt Lett. 2014 Feb 1;39(3):586-9. doi: 10.1364/OL.39.000586.
Opt Lett. 2014.
PMID: 24487872
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