Lee JK - Search Results

1

Self assembled growth of GaSb nano triangles on GaN/sapphire substrate.

Moon SH, Park J, Lee JK, Ryu SW. Moon SH, et al. Among authors: lee jk. J Nanosci Nanotechnol. 2013 Mar;13(3):1943-5. doi: 10.1166/jnn.2013.6961. J Nanosci Nanotechnol. 2013. PMID: 23755625

2

Multi-wavelength emitting InGan/GaN quantum well grown on V-shaped gan(1101) microfacet.

Kang ES, Ju JW, Kim JS, Ahn HK, Lee JK, Kim JH, Shin DC, Lee IH. Kang ES, et al. Among authors: lee ih, lee jk. J Nanosci Nanotechnol. 2007 Nov;7(11):4053-6. doi: 10.1166/jnn.2007.075. J Nanosci Nanotechnol. 2007. PMID: 18047117

3

Improved light extraction efficiency in GaN-based light emitting diode by nano-scale roughening of p-GaN surface.

Park SJ, Sadasivam KG, Chung TH, Hong GC, Kim JB, Kim SM, Park SH, Jeon SR, Lee JK. Park SJ, et al. Among authors: lee jk. J Nanosci Nanotechnol. 2008 Oct;8(10):5393-7. doi: 10.1166/jnn.2008.1030. J Nanosci Nanotechnol. 2008. PMID: 19198463

4

Antimony surfactant effect on green emission InGaN/GaN multi quantum wells grown by MOCVD.

Sadasivam KG, Shim JI, Lee JK. Sadasivam KG, et al. Among authors: lee jk. J Nanosci Nanotechnol. 2011 Feb;11(2):1787-90. doi: 10.1166/jnn.2011.3387. J Nanosci Nanotechnol. 2011. PMID: 21456292

5

Fabrication of 380 nm ultra violet light emitting diodes on nano-patterned n-type GaN substrate.

Baek KS, Sadasivam KG, Lee YG, Song YH, Jeong T, Kim SH, Kim JK, Kim SH, Jeon SR, Lee JK. Baek KS, et al. Among authors: lee yg, lee jk. J Nanosci Nanotechnol. 2011 Aug;11(8):7495-8. doi: 10.1166/jnn.2011.4816. J Nanosci Nanotechnol. 2011. PMID: 22103228

6

Improvement in crystal quality and optical properties of n-type GaN employing nano-scale SiO2 patterned n-type GaN substrate.

Jo MS, Sadasivam KG, Tawfik WZ, Yang SB, Lee JJ, Ha JS, Moon YB, Ryu SW, Lee JK. Jo MS, et al. Among authors: lee jk, lee jj. J Nanosci Nanotechnol. 2013 Jan;13(1):545-7. doi: 10.1166/jnn.2013.6935. J Nanosci Nanotechnol. 2013. PMID: 23646770

7

Fabrication of vertical light emitting diode based on thermal deformation of nanoporous GaN and removable mechanical supporter.

Kang JH, Ebaid M, Lee JK, Jeong T, Ryu SW. Kang JH, et al. Among authors: lee jk. ACS Appl Mater Interfaces. 2014 Jun 11;6(11):8683-7. doi: 10.1021/am501406q. Epub 2014 May 8. ACS Appl Mater Interfaces. 2014. PMID: 24787754

8

Effect of Sapphire Substrate Thickness on the Characteristics of 450 nm InGaN/GaN Multi-Quantum Well Light-Emitting Diodes.

Tawfik WZ, Bea SJ, Yang SB, Ryu SW, Lee JK. Tawfik WZ, et al. Among authors: lee jk. J Nanosci Nanotechnol. 2015 Jul;15(7):5140-3. doi: 10.1166/jnn.2015.10360. J Nanosci Nanotechnol. 2015. PMID: 26373092

9

Numerical Analysis of the Temperature Impact on Performance of GaN-Based 460-nm Light-Emitting Diode.

Tawfik WZ, Lee JK. Tawfik WZ, et al. Among authors: lee jk. J Nanosci Nanotechnol. 2018 Mar 1;18(3):1772-1776. doi: 10.1166/jnn.2018.14942. J Nanosci Nanotechnol. 2018. PMID: 29448657

10

Stable and High Piezoelectric Output of GaN Nanowire-Based Lead-Free Piezoelectric Nanogenerator by Suppression of Internal Screening.

Johar MA, Hassan MA, Waseem A, Ha JS, Lee JK, Ryu SW. Johar MA, et al. Among authors: lee jk. Nanomaterials (Basel). 2018 Jun 14;8(6):437. doi: 10.3390/nano8060437. Nanomaterials (Basel). 2018. PMID: 29904016 Free PMC article.

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