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Page 1
Nanoscale carrier multiplication mapping in a Si diode.
Durand C, Capiod P, Berthe M, Nys JP, Krzeminski C, Stiévenard D, Delerue C, Grandidier B. Durand C, et al. Among authors: nys jp. Nano Lett. 2014 Oct 8;14(10):5636-40. doi: 10.1021/nl5022255. Epub 2014 Sep 24. Nano Lett. 2014. PMID: 25244561
Nonstoichiometric Low-Temperature Grown GaAs Nanowires.
Díaz Álvarez A, Xu T, Tütüncüoglu G, Demonchaux T, Nys JP, Berthe M, Matteini F, Potts HA, Troadec D, Patriarche G, Lampin JF, Coinon C, Fontcuberta i Morral A, Dunin-Borkowski RE, Ebert P, Grandidier B. Díaz Álvarez A, et al. Among authors: nys jp. Nano Lett. 2015 Oct 14;15(10):6440-5. doi: 10.1021/acs.nanolett.5b01802. Epub 2015 Sep 9. Nano Lett. 2015. PMID: 26339987
Shallow Heavily Doped n++ Germanium by Organo-Antimony Monolayer Doping.
Alphazan T, Díaz Álvarez A, Martin F, Grampeix H, Enyedi V, Martinez E, Rochat N, Veillerot M, Dewitte M, Nys JP, Berthe M, Stiévenard D, Thieuleux C, Grandidier B. Alphazan T, et al. Among authors: nys jp. ACS Appl Mater Interfaces. 2017 Jun 14;9(23):20179-20187. doi: 10.1021/acsami.7b02645. Epub 2017 Jun 5. ACS Appl Mater Interfaces. 2017. PMID: 28534397
21 results