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Page 1
A silicon carbide room-temperature single-photon source.
Castelletto S, Johnson BC, Ivády V, Stavrias N, Umeda T, Gali A, Ohshima T. Castelletto S, et al. Among authors: gali a. Nat Mater. 2014 Feb;13(2):151-6. doi: 10.1038/nmat3806. Epub 2013 Nov 17. Nat Mater. 2014. PMID: 24240243
Divacancy in 4H-SiC.
Son NT, Carlsson P, ul Hassan J, Janzén E, Umeda T, Isoya J, Gali A, Bockstedte M, Morishita N, Ohshima T, Itoh H. Son NT, et al. Among authors: gali a. Phys Rev Lett. 2006 Feb 10;96(5):055501. doi: 10.1103/PhysRevLett.96.055501. Epub 2006 Feb 6. Phys Rev Lett. 2006. PMID: 16486945
Identification of the carbon antisite-vacancy pair in 4H-SiC.
Umeda T, Son NT, Isoya J, Janzén E, Ohshima T, Morishita N, Itoh H, Gali A, Bockstedte M. Umeda T, et al. Among authors: gali a. Phys Rev Lett. 2006 Apr 14;96(14):145501. doi: 10.1103/PhysRevLett.96.145501. Epub 2006 Apr 10. Phys Rev Lett. 2006. PMID: 16712089 Free article.
Coherent control of single spins in silicon carbide at room temperature.
Widmann M, Lee SY, Rendler T, Son NT, Fedder H, Paik S, Yang LP, Zhao N, Yang S, Booker I, Denisenko A, Jamali M, Momenzadeh SA, Gerhardt I, Ohshima T, Gali A, Janzén E, Wrachtrup J. Widmann M, et al. Among authors: gali a. Nat Mater. 2015 Feb;14(2):164-8. doi: 10.1038/nmat4145. Epub 2014 Dec 1. Nat Mater. 2015. PMID: 25437256
Optical Polarization of Nuclear Spins in Silicon Carbide.
Falk AL, Klimov PV, Ivády V, Szász K, Christle DJ, Koehl WF, Gali Á, Awschalom DD. Falk AL, et al. Among authors: gali a. Phys Rev Lett. 2015 Jun 19;114(24):247603. doi: 10.1103/PhysRevLett.114.247603. Epub 2015 Jun 17. Phys Rev Lett. 2015. PMID: 26197014
Single-photon emitting diode in silicon carbide.
Lohrmann A, Iwamoto N, Bodrog Z, Castelletto S, Ohshima T, Karle TJ, Gali A, Prawer S, McCallum JC, Johnson BC. Lohrmann A, et al. Among authors: gali a. Nat Commun. 2015 Jul 23;6:7783. doi: 10.1038/ncomms8783. Nat Commun. 2015. PMID: 26205309 Free article.
136 results