Chen P - Search Results

1

Single InAs nanowire room-temperature near-infrared photodetectors.

Miao J, Hu W, Guo N, Lu Z, Zou X, Liao L, Shi S, Chen P, Fan Z, Ho JC, Li TX, Chen XS, Lu W. Miao J, et al. Among authors: chen p, chen xs. ACS Nano. 2014 Apr 22;8(4):3628-35. doi: 10.1021/nn500201g. Epub 2014 Mar 7. ACS Nano. 2014. PMID: 24592971

2

Distinct photocurrent response of individual GaAs nanowires induced by n-type doping.

Xia H, Lu ZY, Li TX, Parkinson P, Liao ZM, Liu FH, Lu W, Hu WD, Chen PP, Xu HY, Zou J, Jagadish C. Xia H, et al. Among authors: chen pp. ACS Nano. 2012 Jul 24;6(7):6005-13. doi: 10.1021/nn300962z. Epub 2012 Jun 29. ACS Nano. 2012. PMID: 22724925

3

High-polarization-discriminating infrared detection using a single quantum well sandwiched in plasmonic micro-cavity.

Li Q, Li Z, Li N, Chen X, Chen P, Shen X, Lu W. Li Q, et al. Among authors: chen p, chen x. Sci Rep. 2014 Sep 11;4:6332. doi: 10.1038/srep06332. Sci Rep. 2014. PMID: 25208580 Free PMC article.

4

High-responsivity graphene/InAs nanowire heterojunction near-infrared photodetectors with distinct photocurrent on/off ratios.

Miao J, Hu W, Guo N, Lu Z, Liu X, Liao L, Chen P, Jiang T, Wu S, Ho JC, Wang L, Chen X, Lu W. Miao J, et al. Among authors: chen p, chen x. Small. 2015 Feb 25;11(8):936-42. doi: 10.1002/smll.201402312. Epub 2014 Oct 31. Small. 2015. PMID: 25363206

5

Catalyst orientation-induced growth of defect-free zinc-blende structured ⟨001̅⟩ InAs nanowires.

Zhang Z, Zheng K, Lu ZY, Chen PP, Lu W, Zou J. Zhang Z, et al. Nano Lett. 2015 Feb 11;15(2):876-82. doi: 10.1021/nl503556a. Epub 2015 Jan 15. Nano Lett. 2015. PMID: 25580886

6

Quantum dot single-photon switches of resonant tunneling current for discriminating-photon-number detection.

Weng Q, An Z, Zhang B, Chen P, Chen X, Zhu Z, Lu W. Weng Q, et al. Among authors: chen p, chen x. Sci Rep. 2015 Mar 23;5:9389. doi: 10.1038/srep09389. Sci Rep. 2015. PMID: 25797442 Free PMC article.

7

Evolution of morphology and microstructure of GaAs/GaSb nanowire heterostructures.

Shi S, Zhang Z, Lu Z, Shu H, Chen P, Li N, Zou J, Lu W. Shi S, et al. Among authors: chen p. Nanoscale Res Lett. 2015 Mar 1;10:108. doi: 10.1186/s11671-015-0812-8. eCollection 2015. Nanoscale Res Lett. 2015. PMID: 25852403 Free PMC article.

8

Influence of substrate orientation on the structural quality of GaAs nanowires in molecular beam epitaxy.

Zhang Z, Shi SX, Chen PP, Lu W, Zou J. Zhang Z, et al. Nanotechnology. 2015 Jan 26;26(25):255601. doi: 10.1088/0957-4484/26/25/255601. Epub 2015 May 29. Nanotechnology. 2015. PMID: 26024290

9

Defect-free zinc-blende structured InAs nanowires realized by in situ two V/III ratio growth in molecular beam epitaxy.

Zhang Z, Lu ZY, Chen PP, Lu W, Zou J. Zhang Z, et al. Nanoscale. 2015 Aug 7;7(29):12592-7. doi: 10.1039/c5nr03503a. Epub 2015 Jul 6. Nanoscale. 2015. PMID: 26145435

10

Defect-free thin InAs nanowires grown using molecular beam epitaxy.

Zhang Z, Chen PP, Lu W, Zou J. Zhang Z, et al. Nanoscale. 2016 Jan 21;8(3):1401-6. doi: 10.1039/c5nr06429e. Nanoscale. 2016. PMID: 26671780

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