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Page 1
Divacancy in 4H-SiC.
Son NT, Carlsson P, ul Hassan J, Janzén E, Umeda T, Isoya J, Gali A, Bockstedte M, Morishita N, Ohshima T, Itoh H. Son NT, et al. Among authors: gali a. Phys Rev Lett. 2006 Feb 10;96(5):055501. doi: 10.1103/PhysRevLett.96.055501. Epub 2006 Feb 6. Phys Rev Lett. 2006. PMID: 16486945
A silicon carbide room-temperature single-photon source.
Castelletto S, Johnson BC, Ivády V, Stavrias N, Umeda T, Gali A, Ohshima T. Castelletto S, et al. Among authors: gali a. Nat Mater. 2014 Feb;13(2):151-6. doi: 10.1038/nmat3806. Epub 2013 Nov 17. Nat Mater. 2014. PMID: 24240243
Electronic structure of the silicon vacancy color center in diamond.
Hepp C, Müller T, Waselowski V, Becker JN, Pingault B, Sternschulte H, Steinmüller-Nethl D, Gali A, Maze JR, Atatüre M, Becher C. Hepp C, et al. Among authors: gali a. Phys Rev Lett. 2014 Jan 24;112(3):036405. doi: 10.1103/PhysRevLett.112.036405. Epub 2014 Jan 24. Phys Rev Lett. 2014. PMID: 24484153 Free article.
136 results