Rotenberg E - Search Results

1

Luminescence, patterned metallic regions, and photon-mediated electronic changes in single-sided fluorinated graphene sheets.

Walter AL, Sahin H, Jeon KJ, Bostwick A, Horzum S, Koch R, Speck F, Ostler M, Nagel P, Merz M, Schupler S, Moreschini L, Chang YJ, Seyller T, Peeters FM, Horn K, Rotenberg E. Walter AL, et al. Among authors: rotenberg e. ACS Nano. 2014 Aug 26;8(8):7801-8. doi: 10.1021/nn501163c. Epub 2014 Aug 12. ACS Nano. 2014. PMID: 25106688

2

Quasicrystalline valence bands in decagonal AlNiCo.

Rotenberg E, Theis W, Horn K, Gille P. Rotenberg E, et al. Nature. 2000 Aug 10;406(6796):602-5. doi: 10.1038/35020519. Nature. 2000. PMID: 10949295

3

Controlling the electronic structure of bilayer graphene.

Ohta T, Bostwick A, Seyller T, Horn K, Rotenberg E. Ohta T, et al. Among authors: rotenberg e. Science. 2006 Aug 18;313(5789):951-4. doi: 10.1126/science.1130681. Science. 2006. PMID: 16917057

4

Interlayer interaction and electronic screening in multilayer graphene investigated with angle-resolved photoemission spectroscopy.

Ohta T, Bostwick A, McChesney JL, Seyller T, Horn K, Rotenberg E. Ohta T, et al. Among authors: rotenberg e. Phys Rev Lett. 2007 May 18;98(20):206802. doi: 10.1103/PhysRevLett.98.206802. Epub 2007 May 16. Phys Rev Lett. 2007. PMID: 17677726

5

Origin of the energy bandgap in epitaxial graphene.

Rotenberg E, Bostwick A, Ohta T, McChesney JL, Seyller T, Horn K. Rotenberg E, et al. Nat Mater. 2008 Apr;7(4):258-9; author reply 259-60. doi: 10.1038/nmat2154a. Nat Mater. 2008. PMID: 18354403 No abstract available.

6

Towards wafer-size graphene layers by atmospheric pressure graphitization of silicon carbide.

Emtsev KV, Bostwick A, Horn K, Jobst J, Kellogg GL, Ley L, McChesney JL, Ohta T, Reshanov SA, Röhrl J, Rotenberg E, Schmid AK, Waldmann D, Weber HB, Seyller T. Emtsev KV, et al. Among authors: rotenberg e. Nat Mater. 2009 Mar;8(3):203-7. doi: 10.1038/nmat2382. Epub 2009 Feb 8. Nat Mater. 2009. PMID: 19202545

7

Quasiparticle transformation during a metal-insulator transition in graphene.

Bostwick A, McChesney JL, Emtsev KV, Seyller T, Horn K, Kevan SD, Rotenberg E. Bostwick A, et al. Among authors: rotenberg e. Phys Rev Lett. 2009 Jul 31;103(5):056404. doi: 10.1103/PhysRevLett.103.056404. Epub 2009 Jul 29. Phys Rev Lett. 2009. PMID: 19792520

8

Extended van Hove singularity and superconducting instability in doped graphene.

McChesney JL, Bostwick A, Ohta T, Seyller T, Horn K, González J, Rotenberg E. McChesney JL, et al. Among authors: rotenberg e. Phys Rev Lett. 2010 Apr 2;104(13):136803. doi: 10.1103/PhysRevLett.104.136803. Epub 2010 Apr 2. Phys Rev Lett. 2010. PMID: 20481902

9

Observation of plasmarons in quasi-freestanding doped graphene.

Bostwick A, Speck F, Seyller T, Horn K, Polini M, Asgari R, MacDonald AH, Rotenberg E. Bostwick A, et al. Among authors: rotenberg e. Science. 2010 May 21;328(5981):999-1002. doi: 10.1126/science.1186489. Science. 2010. PMID: 20489018

10

Fluorographene: a wide bandgap semiconductor with ultraviolet luminescence.

Jeon KJ, Lee Z, Pollak E, Moreschini L, Bostwick A, Park CM, Mendelsberg R, Radmilovic V, Kostecki R, Richardson TJ, Rotenberg E. Jeon KJ, et al. Among authors: rotenberg e. ACS Nano. 2011 Feb 22;5(2):1042-6. doi: 10.1021/nn1025274. Epub 2011 Jan 4. ACS Nano. 2011. PMID: 21204572

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