Sun B - Search Results

1

Fabrication of CeO2 nanoparticle-modified silk for UV protection and antibacterial applications.

Lu Z, Mao C, Meng M, Liu S, Tian Y, Yu L, Sun B, Li CM. Lu Z, et al. Among authors: sun b. J Colloid Interface Sci. 2014 Dec 1;435:8-14. doi: 10.1016/j.jcis.2014.08.015. Epub 2014 Aug 25. J Colloid Interface Sci. 2014. PMID: 25203972

2

Light-controlled resistive switching memory of multiferroic BiMnO3 nanowire arrays.

Sun B, Li CM. Sun B, et al. Phys Chem Chem Phys. 2015 Mar 14;17(10):6718-21. doi: 10.1039/c4cp04901b. Phys Chem Chem Phys. 2015. Retraction in: Phys Chem Chem Phys. 2017 Apr 19;19(16):10699-10700. doi: 10.1039/c7cp90074k PMID: 25683955 Retracted.

3

From dead leaves to sustainable organic resistive switching memory.

Sun B, Zhu S, Mao S, Zheng P, Xia Y, Yang F, Lei M, Zhao Y. Sun B, et al. J Colloid Interface Sci. 2018 Mar 1;513:774-778. doi: 10.1016/j.jcis.2017.12.007. Epub 2017 Dec 5. J Colloid Interface Sci. 2018. PMID: 29223889

4

A flexible nonvolatile resistive switching memory device based on ZnO film fabricated on a foldable PET substrate.

Sun B, Zhang X, Zhou G, Yu T, Mao S, Zhu S, Zhao Y, Xia Y. Sun B, et al. J Colloid Interface Sci. 2018 Jun 15;520:19-24. doi: 10.1016/j.jcis.2018.03.001. Epub 2018 Mar 2. J Colloid Interface Sci. 2018. PMID: 29525500

5

Tunneling of photon-generated carrier in the interface barrier induced resistive switching memory behaviour.

Sun B, Guo T, Zhou G, Ranjan S, Hou W, Hou Y, Zhao Y. Sun B, et al. J Colloid Interface Sci. 2019 Oct 1;553:682-687. doi: 10.1016/j.jcis.2019.06.076. Epub 2019 Jun 24. J Colloid Interface Sci. 2019. PMID: 31252184

6

Non-zero-crossing current-voltage hysteresis behavior induced by capacitive effects in bio-memristor.

Zhu S, Zhou G, Yuan W, Mao S, Yang F, Fu G, Sun B. Zhu S, et al. Among authors: sun b. J Colloid Interface Sci. 2020 Feb 15;560:565-571. doi: 10.1016/j.jcis.2019.10.087. Epub 2019 Oct 24. J Colloid Interface Sci. 2020. PMID: 31679778

7

A magnetic field controlled memristor towards the design of an implantable detector.

Mao S, Sun B, Zhou G, Qin J, Yang Y, Rao Z, Liu M, Ke C, Zhao Y. Mao S, et al. Among authors: sun b. J Colloid Interface Sci. 2023 Aug;643:38-46. doi: 10.1016/j.jcis.2023.04.027. Epub 2023 Apr 8. J Colloid Interface Sci. 2023. PMID: 37044012

8

Ag filament induced nonvolatile resistive switching memory behaviour in hexagonal MoSe₂ nanosheets.

Han P, Sun B, Li J, Li T, Shi Q, Jiao B, Wu Q, Zhang X. Han P, et al. Among authors: sun b. J Colloid Interface Sci. 2017 Nov 1;505:148-153. doi: 10.1016/j.jcis.2017.05.082. Epub 2017 May 25. J Colloid Interface Sci. 2017. PMID: 28577464

9

Enhanced resistive switching effect upon illumination in self-assembled NiWO4 nano-nests.

Sun B, Zhao W, Wei L, Li H, Chen P. Sun B, et al. Chem Commun (Camb). 2014 Nov 7;50(86):13142-5. doi: 10.1039/c4cc05784h. Chem Commun (Camb). 2014. PMID: 25227203

10

Two-bit memory and quantized storage phenomenon in conventional MOS structures with double-stacked Pt-NCs in an HfAlO matrix.

Zhou G, Wu B, Liu X, Li P, Zhang S, Sun B, Zhou A. Zhou G, et al. Among authors: sun b. Phys Chem Chem Phys. 2016 Mar 7;18(9):6509-14. doi: 10.1039/c5cp07650a. Epub 2016 Feb 11. Phys Chem Chem Phys. 2016. PMID: 26864686

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