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Influence of nanoscale faceting on the tunneling properties of near broken gap InAs/AlGaSb heterojunctions grown by selective area epitaxy.
Nanotechnology. 2014 Nov 21;25(46):465302. doi: 10.1088/0957-4484/25/46/465302. Epub 2014 Oct 30.
Nanotechnology. 2014.
PMID: 25354494
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