High-k gate stacks on low bandgap tensile strained Ge and GeSn alloys for field-effect transistors.
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ACS Appl Mater Interfaces. 2015 Jan 14;7(1):62-7. doi: 10.1021/am5075248. Epub 2014 Dec 24.
ACS Appl Mater Interfaces. 2015.
PMID: 25531887