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Tunable charge-trap memory based on few-layer MoS2.
Zhang E, Wang W, Zhang C, Jin Y, Zhu G, Sun Q, Zhang DW, Zhou P, Xiu F. Zhang E, et al. Among authors: xiu f. ACS Nano. 2015 Jan 27;9(1):612-9. doi: 10.1021/nn5059419. Epub 2014 Dec 17. ACS Nano. 2015. PMID: 25496773
Spin-Valve Effect in NiFe/MoS2/NiFe Junctions.
Wang W, Narayan A, Tang L, Dolui K, Liu Y, Yuan X, Jin Y, Wu Y, Rungger I, Sanvito S, Xiu F. Wang W, et al. Among authors: xiu f. Nano Lett. 2015 Aug 12;15(8):5261-7. doi: 10.1021/acs.nanolett.5b01553. Epub 2015 Jul 10. Nano Lett. 2015. PMID: 26151810
Landau level splitting in Cd3As2 under high magnetic fields.
Cao J, Liang S, Zhang C, Liu Y, Huang J, Jin Z, Chen ZG, Wang Z, Wang Q, Zhao J, Li S, Dai X, Zou J, Xia Z, Li L, Xiu F. Cao J, et al. Among authors: xiu f. Nat Commun. 2015 Jul 13;6:7779. doi: 10.1038/ncomms8779. Nat Commun. 2015. PMID: 26165390 Free PMC article.
211 results