Han T - Search Results

1

van der Waals epitaxial growth of atomically thin Bi₂Se₃ and thickness-dependent topological phase transition.

Xu S, Han Y, Chen X, Wu Z, Wang L, Han T, Ye W, Lu H, Long G, Wu Y, Lin J, Cai Y, Ho KM, He Y, Wang N. Xu S, et al. Among authors: han y, han t. Nano Lett. 2015 Apr 8;15(4):2645-51. doi: 10.1021/acs.nanolett.5b00247. Epub 2015 Mar 30. Nano Lett. 2015. PMID: 25807151

2

Achieving Ultrahigh Carrier Mobility in Two-Dimensional Hole Gas of Black Phosphorus.

Long G, Maryenko D, Shen J, Xu S, Hou J, Wu Z, Wong WK, Han T, Lin J, Cai Y, Lortz R, Wang N. Long G, et al. Among authors: han t. Nano Lett. 2016 Dec 14;16(12):7768-7773. doi: 10.1021/acs.nanolett.6b03951. Epub 2016 Dec 5. Nano Lett. 2016. PMID: 27960491

3

Probing the electron states and metal-insulator transition mechanisms in molybdenum disulphide vertical heterostructures.

Chen X, Wu Z, Xu S, Wang L, Huang R, Han Y, Ye W, Xiong W, Han T, Long G, Wang Y, He Y, Cai Y, Sheng P, Wang N. Chen X, et al. Among authors: han y, han t. Nat Commun. 2015 Jan 14;6:6088. doi: 10.1038/ncomms7088. Nat Commun. 2015. PMID: 25586302 Free article.

4

High-quality sandwiched black phosphorus heterostructure and its quantum oscillations.

Chen X, Wu Y, Wu Z, Han Y, Xu S, Wang L, Ye W, Han T, He Y, Cai Y, Wang N. Chen X, et al. Among authors: han y, han t. Nat Commun. 2015 Jun 23;6:7315. doi: 10.1038/ncomms8315. Nat Commun. 2015. PMID: 26099721 Free PMC article.

5

Odd-Integer Quantum Hall States and Giant Spin Susceptibility in p-Type Few-Layer WSe_{2}.

Xu S, Shen J, Long G, Wu Z, Bao ZQ, Liu CC, Xiao X, Han T, Lin J, Wu Y, Lu H, Hou J, An L, Wang Y, Cai Y, Ho KM, He Y, Lortz R, Zhang F, Wang N. Xu S, et al. Among authors: han t. Phys Rev Lett. 2017 Feb 10;118(6):067702. doi: 10.1103/PhysRevLett.118.067702. Epub 2017 Feb 10. Phys Rev Lett. 2017. PMID: 28234544

6

Gate-tunable strong-weak localization transition in few-layer black phosphorus.

Long G, Xu S, Cai X, Wu Z, Han T, Lin J, Cheng C, Cai Y, Wang X, Wang N. Long G, et al. Among authors: han t. Nanotechnology. 2018 Jan 19;29(3):035204. doi: 10.1088/1361-6528/aa9bc1. Nanotechnology. 2018. PMID: 29155410

7

Determining Interaction Enhanced Valley Susceptibility in Spin-Valley-Locked MoS₂.

Lin J, Han T, Piot BA, Wu Z, Xu S, Long G, An L, Cheung P, Zheng PP, Plochocka P, Dai X, Maude DK, Zhang F, Wang N. Lin J, et al. Among authors: han t. Nano Lett. 2019 Mar 13;19(3):1736-1742. doi: 10.1021/acs.nanolett.8b04731. Epub 2019 Feb 7. Nano Lett. 2019. PMID: 30720286

8

Bridging the gap between atomically thin semiconductors and metal leads.

Cai X, Wu Z, Han X, Chen Y, Xu S, Lin J, Han T, He P, Feng X, An L, Shi R, Wang J, Ying Z, Cai Y, Hua M, Liu J, Pan D, Cheng C, Wang N. Cai X, et al. Among authors: han x, han t. Nat Commun. 2022 Apr 1;13(1):1777. doi: 10.1038/s41467-022-29449-4. Nat Commun. 2022. PMID: 35365627 Free PMC article.

9

Even-odd layer-dependent magnetotransport of high-mobility Q-valley electrons in transition metal disulfides.

Wu Z, Xu S, Lu H, Khamoshi A, Liu GB, Han T, Wu Y, Lin J, Long G, He Y, Cai Y, Yao Y, Zhang F, Wang N. Wu Z, et al. Among authors: han t. Nat Commun. 2016 Sep 21;7:12955. doi: 10.1038/ncomms12955. Nat Commun. 2016. PMID: 27651106 Free PMC article.

10

Isolation and Characterization of Few-Layer Manganese Thiophosphite.

Long G, Zhang T, Cai X, Hu J, Cho CW, Xu S, Shen J, Wu Z, Han T, Lin J, Wang J, Cai Y, Lortz R, Mao Z, Wang N. Long G, et al. Among authors: han t. ACS Nano. 2017 Nov 28;11(11):11330-11336. doi: 10.1021/acsnano.7b05856. Epub 2017 Oct 16. ACS Nano. 2017. PMID: 29023097

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