Bottom-up fabrication of InAs-on-nothing MOSFET using selective area molecular beam epitaxy.
Pastorek M, Olivier A, Lechaux Y, Wichmann N, Karatsori T, Fahed M, Bucamp A, Addad A, Troadec D, Ghibaudo G, Desplanque L, Wallart X, Bollaert S.
Pastorek M, et al. Among authors: fahed m.
Nanotechnology. 2019 Jan 18;30(3):035301. doi: 10.1088/1361-6528/aaebbd.
Nanotechnology. 2019.
PMID: 30452388