Komatsu K - Search Results

1

Erratum: Parity effect of bipolar quantum Hall edge transport around graphene antidots.

Matsuo S, Nakaharai S, Komatsu K, Tsukagoshi K, Moriyama T, Ono T, Kobayashi K. Matsuo S, et al. Among authors: komatsu k. Sci Rep. 2015 Aug 3;5:12591. doi: 10.1038/srep12591. Sci Rep. 2015. PMID: 26237528 Free PMC article. No abstract available.

2

Parity effect of bipolar quantum Hall edge transport around graphene antidots.

Matsuo S, Nakaharai S, Komatsu K, Tsukagoshi K, Moriyama T, Ono T, Kobayashi K. Matsuo S, et al. Among authors: komatsu k. Sci Rep. 2015 Jun 30;5:11723. doi: 10.1038/srep11723. Sci Rep. 2015. PMID: 26122468 Free PMC article.

3

Fabry-Pérot resonances and a crossover to the quantum Hall regime in ballistic graphene quantum point contacts.

Ahmad NF, Komatsu K, Iwasaki T, Watanabe K, Taniguchi T, Mizuta H, Wakayama Y, Hashim AM, Morita Y, Moriyama S, Nakaharai S. Ahmad NF, et al. Among authors: komatsu k. Sci Rep. 2019 Feb 28;9(1):3031. doi: 10.1038/s41598-019-39909-5. Sci Rep. 2019. PMID: 30816251 Free PMC article.

4

Localization to delocalization probed by magnetotransport of hBN/graphene/hBN stacks in the ultra-clean regime.

Iwasaki T, Moriyama S, Ahmad NF, Komatsu K, Watanabe K, Taniguchi T, Wakayama Y, Hashim AM, Morita Y, Nakaharai S. Iwasaki T, et al. Among authors: komatsu k. Sci Rep. 2021 Sep 22;11(1):18845. doi: 10.1038/s41598-021-98266-4. Sci Rep. 2021. PMID: 34552168 Free PMC article.

5

Enhanced current-rectification in bilayer graphene with an electrically tuned sloped bandgap.

Aparecido-Ferreira A, Miyazaki H, Li SL, Komatsu K, Nakaharai S, Tsukagoshi K. Aparecido-Ferreira A, et al. Among authors: komatsu k. Nanoscale. 2012 Dec 21;4(24):7842-6. doi: 10.1039/c2nr32526h. Epub 2012 Nov 13. Nanoscale. 2012. PMID: 23149422

6

Barrier inhomogeneities at vertically stacked graphene-based heterostructures.

Lin YF, Li W, Li SL, Xu Y, Aparecido-Ferreira A, Komatsu K, Sun H, Nakaharai S, Tsukagoshi K. Lin YF, et al. Among authors: komatsu k. Nanoscale. 2014 Jan 21;6(2):795-9. doi: 10.1039/c3nr03677d. Nanoscale. 2014. PMID: 24257682

7

Thickness scaling effect on interfacial barrier and electrical contact to two-dimensional MoS2 layers.

Li SL, Komatsu K, Nakaharai S, Lin YF, Yamamoto M, Duan X, Tsukagoshi K. Li SL, et al. Among authors: komatsu k. ACS Nano. 2014 Dec 23;8(12):12836-42. doi: 10.1021/nn506138y. Epub 2014 Dec 5. ACS Nano. 2014. PMID: 25470503

8

Thickness-dependent interfacial Coulomb scattering in atomically thin field-effect transistors.

Li SL, Wakabayashi K, Xu Y, Nakaharai S, Komatsu K, Li WW, Lin YF, Aparecido-Ferreira A, Tsukagoshi K. Li SL, et al. Among authors: komatsu k. Nano Lett. 2013 Aug 14;13(8):3546-52. doi: 10.1021/nl4010783. Epub 2013 Jul 22. Nano Lett. 2013. PMID: 23862641

9

Suppression of thermally activated carrier transport in atomically thin MoS2 on crystalline hexagonal boron nitride substrates.

Chan MY, Komatsu K, Li SL, Xu Y, Darmawan P, Kuramochi H, Nakaharai S, Aparecido-Ferreira A, Watanabe K, Taniguchi T, Tsukagoshi K. Chan MY, et al. Among authors: komatsu k. Nanoscale. 2013 Oct 21;5(20):9572-6. doi: 10.1039/c3nr03220e. Nanoscale. 2013. PMID: 23986323

10

Structure and transport properties of the interface between CVD-grown graphene domains.

Ogawa Y, Komatsu K, Kawahara K, Tsuji M, Tsukagoshi K, Ago H. Ogawa Y, et al. Among authors: komatsu k. Nanoscale. 2014 Jul 7;6(13):7288-94. doi: 10.1039/c3nr06828e. Nanoscale. 2014. PMID: 24847777

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