Lv H - Search Results

1

Atomic View of Filament Growth in Electrochemical Memristive Elements.

Lv H, Xu X, Sun P, Liu H, Luo Q, Liu Q, Banerjee W, Sun H, Long S, Li L, Liu M. Lv H, et al. Sci Rep. 2015 Aug 21;5:13311. doi: 10.1038/srep13311. Sci Rep. 2015. PMID: 26293982 Free PMC article.

2

Controllable growth of nanoscale conductive filaments in solid-electrolyte-based ReRAM by using a metal nanocrystal covered bottom electrode.

Liu Q, Long S, Lv H, Wang W, Niu J, Huo Z, Chen J, Liu M. Liu Q, et al. Among authors: lv h. ACS Nano. 2010 Oct 26;4(10):6162-8. doi: 10.1021/nn1017582. ACS Nano. 2010. PMID: 20853865

3

Proton-based total-dose irradiation effects on Cu/HfO2:Cu/Pt ReRAM devices.

Butcher B, He X, Huang M, Wang Y, Liu Q, Lv H, Liu M, Wang W. Butcher B, et al. Among authors: lv h. Nanotechnology. 2010 Nov 26;21(47):475206. doi: 10.1088/0957-4484/21/47/475206. Epub 2010 Oct 29. Nanotechnology. 2010. PMID: 21030760

4

Improvement of resistive switching characteristics in ZrO2 film by embedding a thin TiOx layer.

Li Y, Long S, Lv H, Liu Q, Wang Y, Zhang S, Lian W, Wang M, Zhang K, Xie H, Liu S, Liu M. Li Y, et al. Among authors: lv h. Nanotechnology. 2011 Jun 24;22(25):254028. doi: 10.1088/0957-4484/22/25/254028. Epub 2011 May 16. Nanotechnology. 2011. PMID: 21572216

5

Real-time observation on dynamic growth/dissolution of conductive filaments in oxide-electrolyte-based ReRAM.

Liu Q, Sun J, Lv H, Long S, Yin K, Wan N, Li Y, Sun L, Liu M. Liu Q, et al. Among authors: lv h. Adv Mater. 2012 Apr 10;24(14):1844-9. doi: 10.1002/adma.201104104. Epub 2012 Mar 7. Adv Mater. 2012. PMID: 22407902

6

Response to "comment on real-time observation on dynamic growth/dissolution of conductive filaments in oxide-electrolyte-based ReRAM".

Liu Q, Jun S, Lv H, Long S, Li L, Yin K, Wan N, Li Y, Sun L, Liu M. Liu Q, et al. Among authors: lv h. Adv Mater. 2013 Jan 11;25(2):165-7. doi: 10.1002/adma.201203771. Epub 2012 Oct 19. Adv Mater. 2013. PMID: 23086910 No abstract available.

7

Bipolar one diode-one resistor integration for high-density resistive memory applications.

Li Y, Lv H, Liu Q, Long S, Wang M, Xie H, Zhang K, Huo Z, Liu M. Li Y, et al. Among authors: lv h. Nanoscale. 2013 Jun 7;5(11):4785-9. doi: 10.1039/c3nr33370a. Epub 2013 Apr 23. Nanoscale. 2013. PMID: 23612603

8

Thermoelectric Seebeck effect in oxide-based resistive switching memory.

Wang M, Bi C, Li L, Long S, Liu Q, Lv H, Lu N, Sun P, Liu M. Wang M, et al. Among authors: lv h. Nat Commun. 2014 Aug 20;5:4598. doi: 10.1038/ncomms5598. Nat Commun. 2014. PMID: 25141267 Free PMC article.

9

High uniformity and improved nonlinearity by embedding nanocrystals in selector-less resistive random access memory.

Banerjee W, Lu N, Li L, Sun P, Liu Q, Lv H, Long S, Liu M. Banerjee W, et al. Among authors: lv h. Nanoscale. 2014 Dec 10. doi: 10.1039/c4nr05077k. Epub 2014 Dec 10. Nanoscale. 2014. Retraction in: Nanoscale. 2015 Mar 12;7(12):5545. doi: 10.1039/c5nr90037a PMID: 25491764 Retracted.

10

Evolution of conductive filament and its impact on reliability issues in oxide-electrolyte based resistive random access memory.

Lv H, Xu X, Liu H, Liu R, Liu Q, Banerjee W, Sun H, Long S, Li L, Liu M. Lv H, et al. Sci Rep. 2015 Jan 14;5:7764. doi: 10.1038/srep07764. Sci Rep. 2015. PMID: 25586207 Free PMC article.

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