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Impact and behavior of Sn during the Ni/GeSn solid-state reaction.
Quintero A, Gergaud P, Hartmann JM, Delaye V, Reboud V, Cassan E, Rodriguez P. Quintero A, et al. Among authors: delaye v. J Appl Crystallogr. 2020 Apr 14;53(Pt 3):605-613. doi: 10.1107/S1600576720003064. eCollection 2020 Jun 1. J Appl Crystallogr. 2020. PMID: 32684875 Free PMC article.
Al5+αSi5+δN12, a new Nitride compound.
Dagher R, Lymperakis L, Delaye V, Largeau L, Michon A, Brault J, Vennéguès P. Dagher R, et al. Among authors: delaye v. Sci Rep. 2019 Nov 4;9(1):15907. doi: 10.1038/s41598-019-52363-7. Sci Rep. 2019. PMID: 31685888 Free PMC article.
GeSn heterostructure micro-disk laser operating at 230 K.
Thai QM, Pauc N, Aubin J, Bertrand M, Chrétien J, Delaye V, Chelnokov A, Hartmann JM, Reboud V, Calvo V. Thai QM, et al. Among authors: delaye v. Opt Express. 2018 Dec 10;26(25):32500-32508. doi: 10.1364/OE.26.032500. Opt Express. 2018. PMID: 30645416 Free article.