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Page 1
Tunnel electroresistance through organic ferroelectrics.
Tian BB, Wang JL, Fusil S, Liu Y, Zhao XL, Sun S, Shen H, Lin T, Sun JL, Duan CG, Bibes M, Barthélémy A, Dkhil B, Garcia V, Meng XJ, Chu JH. Tian BB, et al. Nat Commun. 2016 May 4;7:11502. doi: 10.1038/ncomms11502. Nat Commun. 2016. PMID: 27143121 Free PMC article.
Interfacial memristors in Al-LaNiO3 heterostructures.
Tian B, Nukala P, Hassine MB, Zhao X, Wang X, Shen H, Wang J, Sun S, Lin T, Sun J, Ge J, Huang R, Duan C, Reiss T, Varela M, Dkhil B, Meng X, Chu J. Tian B, et al. Phys Chem Chem Phys. 2017 Jul 5;19(26):16960-16968. doi: 10.1039/c7cp02398g. Phys Chem Chem Phys. 2017. PMID: 28636685
Graphene Dirac point tuned by ferroelectric polarization field.
Wang X, Chen Y, Wu G, Wang J, Tian B, Sun S, Shen H, Lin T, Hu W, Kang T, Tang M, Xiao Y, Sun J, Meng X, Chu J. Wang X, et al. Nanotechnology. 2018 Apr 3;29(13):134002. doi: 10.1088/1361-6528/aaa852. Nanotechnology. 2018. PMID: 29339566
Ultralow-power in-memory computing based on ferroelectric memcapacitor network.
Tian B, Xie Z, Chen L, Hao S, Liu Y, Feng G, Liu X, Liu H, Yang J, Zhang Y, Bai W, Lin T, Shen H, Meng X, Zhong N, Peng H, Yue F, Tang X, Wang J, Zhu Q, Ivry Y, Dkhil B, Chu J, Duan C. Tian B, et al. Exploration (Beijing). 2023 May 11;3(3):20220126. doi: 10.1002/EXP.20220126. eCollection 2023 Jun. Exploration (Beijing). 2023. PMID: 37933380 Free PMC article.
A ferroelectric fin diode for robust non-volatile memory.
Feng G, Zhu Q, Liu X, Chen L, Zhao X, Liu J, Xiong S, Shan K, Yang Z, Bao Q, Yue F, Peng H, Huang R, Tang X, Jiang J, Tang W, Guo X, Wang J, Jiang A, Dkhil B, Tian B, Chu J, Duan C. Feng G, et al. Nat Commun. 2024 Jan 13;15(1):513. doi: 10.1038/s41467-024-44759-5. Nat Commun. 2024. PMID: 38218871 Free PMC article.
24 results