Banerjee W - Search Results

1

Super non-linear RRAM with ultra-low power for 3D vertical nano-crossbar arrays.

Luo Q, Xu X, Liu H, Lv H, Gong T, Long S, Liu Q, Sun H, Banerjee W, Li L, Gao J, Lu N, Liu M. Luo Q, et al. Among authors: banerjee w. Nanoscale. 2016 Aug 25;8(34):15629-36. doi: 10.1039/c6nr02029a. Nanoscale. 2016. PMID: 27510434

2

High uniformity and improved nonlinearity by embedding nanocrystals in selector-less resistive random access memory.

Banerjee W, Lu N, Li L, Sun P, Liu Q, Lv H, Long S, Liu M. Banerjee W, et al. Nanoscale. 2014 Dec 10. doi: 10.1039/c4nr05077k. Epub 2014 Dec 10. Nanoscale. 2014. Retraction in: Nanoscale. 2015 Mar 12;7(12):5545. doi: 10.1039/c5nr90037a PMID: 25491764 Retracted.

3

Electronic imitation of behavioral and psychological synaptic activities using TiO_x/Al₂O₃-based memristor devices.

Banerjee W, Liu Q, Lv H, Long S, Liu M. Banerjee W, et al. Nanoscale. 2017 Oct 5;9(38):14442-14450. doi: 10.1039/c7nr04741j. Nanoscale. 2017. PMID: 28926076

4

Intrinsic anionic rearrangement by extrinsic control: transition of RS and CRS in thermally elevated TiN/HfO₂/Pt RRAM.

Banerjee W, Cai WF, Zhao X, Liu Q, Lv H, Long S, Liu M. Banerjee W, et al. Nanoscale. 2017 Dec 7;9(47):18908-18917. doi: 10.1039/c7nr06628g. Nanoscale. 2017. PMID: 29177343

5

Full imitation of synaptic metaplasticity based on memristor devices.

Wu Q , Wang H , Luo Q , Banerjee W , Cao J , Zhang X , Wu F , Liu Q , Li L , Liu M . Wu Q , et al. Among authors: banerjee w. Nanoscale. 2018 Mar 29;10(13):5875-5881. doi: 10.1039/c8nr00222c. Nanoscale. 2018. PMID: 29508884

6

Evolution of conductive filament and its impact on reliability issues in oxide-electrolyte based resistive random access memory.

Lv H, Xu X, Liu H, Liu R, Liu Q, Banerjee W, Sun H, Long S, Li L, Liu M. Lv H, et al. Among authors: banerjee w. Sci Rep. 2015 Jan 14;5:7764. doi: 10.1038/srep07764. Sci Rep. 2015. PMID: 25586207 Free PMC article.

7

Atomic View of Filament Growth in Electrochemical Memristive Elements.

Lv H, Xu X, Sun P, Liu H, Luo Q, Liu Q, Banerjee W, Sun H, Long S, Li L, Liu M. Lv H, et al. Among authors: banerjee w. Sci Rep. 2015 Aug 21;5:13311. doi: 10.1038/srep13311. Sci Rep. 2015. PMID: 26293982 Free PMC article.

8

Eliminating Negative-SET Behavior by Suppressing Nanofilament Overgrowth in Cation-Based Memory.

Liu S, Lu N, Zhao X, Xu H, Banerjee W, Lv H, Long S, Li Q, Liu Q, Liu M. Liu S, et al. Among authors: banerjee w. Adv Mater. 2016 Dec;28(48):10623-10629. doi: 10.1002/adma.201603293. Epub 2016 Oct 17. Adv Mater. 2016. PMID: 27748526

9

Confining Cation Injection to Enhance CBRAM Performance by Nanopore Graphene Layer.

Zhao X, Liu S, Niu J, Liao L, Liu Q, Xiao X, Lv H, Long S, Banerjee W, Li W, Si S, Liu M. Zhao X, et al. Among authors: banerjee w. Small. 2017 Sep;13(35). doi: 10.1002/smll.201603948. Epub 2017 Feb 24. Small. 2017. PMID: 28234422

10

Variability Improvement of TiO _x /Al₂O₃ Bilayer Nonvolatile Resistive Switching Devices by Interfacial Band Engineering with an Ultrathin Al₂O₃ Dielectric Material.

Banerjee W, Xu X, Lv H, Liu Q, Long S, Liu M. Banerjee W, et al. ACS Omega. 2017 Oct 18;2(10):6888-6895. doi: 10.1021/acsomega.7b01211. eCollection 2017 Oct 31. ACS Omega. 2017. PMID: 31457275 Free PMC article.

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